SiC上Ti/Ni/Au多层金属的欧姆接触特性

1.西安电子科技大学,宽禁带半导体材料与器件教育部重点实验室,西安,710071

2.西安电子科技大学,宽禁带半导体材料与器件教育部重点实验室,西安,710071

3.西安电子科技大学,宽禁带半导体材料与器件教育部重点实验室,西安,710071

4.西安电子科技大学,宽禁带半导体材料与器件教育部重点实验室,西安,710071

5.西安电子科技大学,宽禁带半导体材料与器件教育部重点实验室,西安,710071

基金项目: 国家部委预研项目(41308060105)

Ohmic contact property of Ti/Ni/Au on n-type 4H-SiC

采用Ti/Ni/Au多层金属在高掺杂n型4H-SiC外延层上制作了欧姆接触测试图形,通过传输线法(Transmission Line Method,TLM)测量得到的最小比接触电阻为1.4×10-5Ω·cm2,经500℃N2老化后接触电阻大约有一个数量级的增加并保持稳定.

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