摸索了利用PECVD方法制备嵌埋于硅槽中Si反Opal结构的工艺条件,探索性研究了射频功率、气体流量、反应室压力、沉积时间和Opal基底状态对填充效果的影响.结果显示射频功率越小,流量越低,反应室压力越大,则反应速率越低,Opal结构内外填充越均匀.同时,在[SiHm]自由基扩散通道不被堵塞的前提下,沉积时间越长,Opal结构排列越规整,则整体填充越致密,越有利于反Opal结构的形成.
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