采用两步生长法用金属有机物气相外延技术在GaAs(100)衬底生长InP,用原子力显微镜探索了退火和未退火的低温缓冲层以及InP外延层的表面形貌,测量了他们的表面均方根值,讨论了低温缓冲层表面形貌随生长温度的变化以及退火对其表面形貌的影响,并分析外延层与低温缓冲层表面形貌的依赖关系,外延层表面形貌均方根值与XRD测量值一致,在450 ℃生长低温缓冲层,外延层有最好的表面形貌.
Two -step method was adopted to grow InP on GaAs (100) substrates by metalorganic chemical vapor deposition ( MOCVD), morphology of low - temperature buffer ( LTB ) layers and epilayers were analyzed by atomic force microscopy (AFM). The morphology of epitaxial layers inherites that of LTB layers, heat - treatment processes make buffer layers rougher, their root - mean - square (RMS) has the smallest value when LTB growth temperature is 450 ℃, it is consistent with the result of X - ray diffraction measurements. Compared with LTB layers,two dimensional (2D) growth is successfully realized in epilayers.
参考文献
| [1] | Takano Y;Sasaki T et al.Two-step growth of InP on GaAs substrates by metalorganic vapor phase epitaxy[J].Journal of Crystal Growth,1996,169:621. |
| [2] | Yae Okuno;Toshihiro Kawano et al.Dislocation reduction in InP layers grown on sawtooth-patterned GaAs substrates[J].Journal of Crystal Growth,1994,137:313. |
| [3] | Derbali MB.;Maaref H.;Buttard D.;Abraham P.;Monteil Y.;Meddeb J. .A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition[J].Journal of Applied Physics,1998(1):503-508. |
| [4] | Lee M K;Wuu D S;Tung H H .Heteroepitaxial growth of InP on GaAs by low-pressure metalorganic chemical vapor deposition[J].Journal of Applied Physics,1987,62:3209. |
| [5] | Hong Yang;Hong Wang;K. Radhakrishnan;Chee Leong Tan .Thermal Resistance of Metamorphic InP-Based HBTs on GaAs Substrates Using a Linearly Graded In{sub}xGa{sub}(1-x)P Metamorphic Buffer[J].IEEE Transactions on Electron Devices,2004(8):1221-1227. |
| [6] | Tamura M.;Kasai J.;Nishida A.;Hashimoto A. .THREADING DISLOCATIONS IN GAAS ON PRE-PATTERNED SI AND IN POST-PATTERNED GAAS ON SI[J].Journal of Crystal Growth,1995(3/4):264-273. |
| [7] | Peiner E;Wehmann H H et al.High-quality InGaAs on exactly (001) -oriented Si grown by Metal -organic vapour-phase epitaxy[J].Journal of Crystal Growth,1997,172:44. |
| [8] | Deping Xiong;Aiguang Ren.Influence of the low temperature buffer layer on InP epitaxial growth on GaAs substrates[A].,2005:602039. |
| [9] | Aiguang Ren;Xiaomin Ren et al.Heteroepitaxy of In0.53Ga0.47As on GaAs submite by low pressure metalorganic chemical vapor deposition for the OEIC applications[J].Microelectronics Journal,37:700. |
| [10] | Mattila M;Sopanen M et al.The morphology of an InP wetting layer on GaAs[J].Applied Sueface Science,2004,229:333. |
| [11] | Ridgway M C et al.Common structure in amorphous compound semiconductors[J].Nuclear Instruments and Methods Physics Research,2003,199:235. |
| [12] | Peiner E.;Iber H.;Tang GP.;Schlachetzki A.;Mo S. .CHARACTERIZATION OF THIN BUFFER LAYERS FOR STRONGLY MISMATCHED HETEROEPITAXY[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1996(1/2):226-229. |
| [13] | Wang Y Q;Wang Z L et al.Inteffacial Roughening in Lattice Matched GaInP/GaAs heterostructures[J].Thin Solid Films,2001,397:162. |
| [14] | Xie Q;Nostrand J E;Brown J L et al.Arsenic for antimony exchange on GaSh,its impacts on surface morphology,and interface structure[J].Journal of Applied Physics,1999,86:329. |
| [15] | Wang BZ.;Peng YH.;Jin Z.;Li YD.;Liu SY.;Zhao FH. .Self-organized InAs quantum dots formation by As/P exchange reaction on (001) InP substrate[J].Applied physics letters,1998(19):2433-2435. |
| [16] | Zhi-biao;QI Ming et al.Influence of the buffer layer on GaN two -dimension growth by RF -plasma MBE[J].J Functional Materials and Devices,2002,8:133. |
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