欢迎登录材料期刊网

材料期刊网

高级检索

采用新型渠道火花烧蚀技术在LaAlO3(001)基片上生长了La0.7S0.3MnO3(LSMO)薄膜.X射线衍射对样品结构的分析表明,制备的LSMO薄膜具有c轴取向生长的特点,薄膜与基片间因晶格不匹配而受面内应力挤压,发生弛豫而出现两相.在室温下采用振动样品磁强计测试样品的面内方向磁滞回线,表明制备的LSMO样品具有软磁性,矫顽力Hc=13 Oe.通过标准四探针法测量了LSMO薄膜的室温薄膜电阻与外加磁场的关系,得知零场电阻率ρ(0)=19.4 mΩ·cm,室温下4800 Oe外场作用下的磁电阻变化率为2.25%,对此用双交换作用机制定性地加以了解释.

参考文献

[1] Prinz Gary A .Magnetoelectronics[J].Science,1998,282:1660-1663.
[2] Groot R A;Mueller F M .New Class of Materials:HalfMetallic Ferromagnets[J].Physical Review Letters,1983,50:2024-2027.
[3] Alexey V. Khvalkovskii;Alexandr S. Mischenko;Anatoliy K. Zvezdin .Volt-ampere characteristics of spin half-metallic transistor[J].Journal of Magnetism and Magnetic Materials,2003(0):84-86.
[4] Jin S;Tiefel T H;McCormack M et al.Thousandfold change in resistivity in magnetoresistive La-Ca-Mn-O films[J].Science,1994,264:413-415.
[5] S. Y. Yang;W. L. Kuang;Y. Liou .Growth and characterization of La_(0.7)Sr_(0.3)MnO_3 films on various substrates[J].Journal of Magnetism and Magnetic Materials,2004(3):326-331.
[6] Urushibara A;Moritomo Y;Arima T et al.Insulator-metal transistion and giant magnetoresistance in La1-xSrxMnO3[J].Physical Review B:Condensed Matter,1995,51(20):14103-14109.
[7] Pailloux F.;Maurice JL.;Contour JP.;Lyonnet R. .Twinning and lattice distortions in the epitaxy of La0.67Sr0.33MnO3 thin films on (001) SrTiO3[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(4):263-267.
[8] Witke T;Lenk A;Schultrich B et al.Investigation of plasma produced by laser and electron pulse ablation[J].Surface and Coatings Technology,1995,74-75:580-585.
[9] Huang L;Li XF;Zhang Q;Miao WN;Zhang L;Yan XJ;Zhang ZJ;Hua ZY .Properties of transparent conductive In2O3 : Mo thin films deposited by Channel Spark Ablation[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,2005(5):1350-1353.
[10] Mitchell JF.;Potter CD.;Hinks DG.;Jorgensen JD.;Bader SD.;Argyriou DN. .STRUCTURAL PHASE DIAGRAM OF LA1-XSRXMNO3+DELTA - RELATIONSHIP TO MAGNETIC AND TRANSPORT PROPERTIES[J].Physical Review.B.Condensed Matter,1996(9):6172-6183.
[11] Hammouche A;Siebert E;Hammou A .Crystallographic,thermal and electrochemical properties of the system La1-xSrxMnO3 for high temperature solid electrolyte fuel cells[J].Materials Research Bulletin,1989,24:367-380.
[12] Lamartine Meda;Klaus H. Dahmen;Saleh Hayek;Hamid Garmestani .X-ray diffraction residual stress calculation on textured La_(2/3)Sr_(1/3)MnO_3 thin film[J].Journal of Crystal Growth,2004(1/4):185-191.
[13] Kwon C.;Kim KC.;Gu JY.;Lofland SE.;Bhagat SM.;Trajanovic Z.;Rajeswari M.;Venkatesan T.;Kratz AR.;Gomez RD.;Ramesh R.;Robson MC. .STRESS-INDUCED EFFECTS IN EPITAXIAL (LA0.7SR0.3)MNO3 FILMS[J].Journal of Magnetism and Magnetic Materials,1997(3):229-236.
[14] Mitsugi F;Ikegami T;Ebihara K et al.Colossal magnetoresistive and ferroelectric thin films deposited by excimer laser induced plasma[J].Science and Technology of Advanced Materials,2001,2:525-531.
[15] Kim DW.;Kim DH.;Noh TW.;Oh E.;Kim HC.;Lee HC. .Properties of La0.7Sr0.3MnO3 thin films grown on gallium nitrides[J].Solid State Communications,2002(11):631-634.
[16] Fontcuberta F;Bibes M;Martinez B et al.Tunable epitaxial growth of magnetoresistive La2/3 Sr1/3 MnO3 thin films[J].Journal of Applied Physics,1999,85(08):4800-4802.
[17] S.Y. Yang;W.L. Kuang;C.H. Ho;W.S. Tse;M.T. Lin;S.F. Lee;Y. Liou;Y.D. Yao .Magnetoresistance of La_(0.7)Sr_(0.3)MnO_(3) film at room temperature[J].Journal of Magnetism and Magnetic Materials,2001(1):690-692.
[18] Zener C .Interaction between the d-Shells in the Transition Metals Ⅱ Ferromagnetic Compounds of Manganese with Perovskite Structure[J].Physical Review,1951,82:403-405.
[19] Jahn H A;Teller E .Stability of Polyatomic Molecules in Degenerate Electronics States Ⅰ-Orbital Degeneracy[J].Proc Roy Soc,1937,A161:220-235.
[20] Goodenough J B;Loeb A L .Theory of Ionic Ordering,Crystal Distortion,and Magnetic Exchange Due to Covalent Forces in Spinels[J].Physical Review,1955,98(02):391-408.
[21] Cai J W;Zhao J G;Zhan W S et al.Aspects of Magnetoelectronics[J].Progress In Physics,1997,17(02):119-149.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%