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提出了一种简化的全耗尽SOI MOSFET阈值电压解析模型.该模型物理意义明确,形式简单,不需要非常复杂的计算.通过在不同条件下将本文的模拟结果和MEDICI模拟结果进行对比,验证了本模型的精确性.因此本模型对于器件物理特性的研究和工艺设计有很好的指导意义.

参考文献

[1] Colinge J P.Silicon-On-Insulator Technology:materials to VLSI[M].Boston:Kluwer Academic Publishers,1991
[2] Chin-Shan Hou;Ching-Yuan Wu .A 2-D analytic model for the threshold-voltage of fully depleted short gate-length Si-SOI MESFETs[J].IEEE Transactions on Electron Devices,1995(12):2156-2162.
[3] T. K. Chiang;Y. H. Wang;M. P. Houng .Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's[J].Solid-State Electronics,1999(1):123-129.
[4] 程彬杰,邵志标,唐天同,沈文正,赵文魁.深亚微米FD-SOI器件亚阈模型[J].半导体学报,2001(07):908-914.
[5] Fu Jun;TianLi Lin;QianPei xin et al.An analytic threshold-voltage model for fully-depleted SOI MOSFET[J].CHINESE JOURNAL OF ELECTRONICS,1996,24(05):48-52.
[6] Mazhari B.;Ioannou D.E. .Surface potential at threshold in thin-film SOI MOSFET's[J].IEEE Transactions on Electron Devices,1993(6):1129-1133.
[7] Mohamed A Imam;Mohamed A Osman;Ashraf A Osman.Modeling the threshold voltage of long and short-channel fully depleted SOI MOSFET's with back gate substrate induced surface effects[A].,1997:343-346.
[8] Young K.K. .Short-channel effect in fully depleted SOI MOSFETs[J].IEEE Transactions on Electron Devices,1989(2):399-402.
[9] Liu Z.-H.;Hu C. .Threshold voltage model for deep-submicrometer MOSFETs[J].IEEE Transactions on Electron Devices,1993(1):86-95.
[10] James B Kuo;Su Ker-wei.CMOS VLSI engineering silicon-on-insulator (SOI)[M].Kluwer Academic Publishers,1998
[11] Hongmei Wang;Xuemei Xi .Modelling the threshold voltage of deep-submicrometer fully depleted SOI MOSFETs[J].Electronics Letters,1997(16):1415-1416.
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