锗纳米晶浮栅存储器的电荷存储特性

功能材料与器件学报 , 2007, 13(2): 145-149. doi: 10.3969/j.issn.1007-4252.2007.02.009

锗纳米晶浮栅存储器的电荷存储特性

刘奇斌 ^1, , 宋志棠 ^2, , 吴良才 ^3, , 封松林 ^4,

1.中国科学院上海微系统与信息技术研究所纳米技术实验室,上海,200050;中国科学院研究生院,北京,100039

2.中国科学院上海微系统与信息技术研究所纳米技术实验室,上海,200050

3.中国科学院上海微系统与信息技术研究所纳米技术实验室,上海,200050

4.中国科学院上海微系统与信息技术研究所纳米技术实验室,上海,200050

基金项目: 上海市科委科技计划(0452nm012;04DZ05612;04ZR14154;04JC14080;05JC14076;AM0414;05nm05043;AM0517) 中国科学院基金(Y2005027)

关键词： Ge纳米晶 , 高k介质 , C-V曲线

Charge storage characteristics for Ge nanocrystal floating gate memory

Ge纳米晶嵌入高k介质中既可以提高器件的可靠性又可以降低写入电压和提高存储速度.本实验主要研究了用于非挥发存储器的含有Ge纳米晶MIS结构的电荷存储特性.MIS结构由电子束蒸发的方法制备,包括Al2O3控制栅,Al2O3中Ge纳米晶和Al2O3隧道氧化层.这种MIS结构在1MHz下的C-V特性表现出良好的电学性能,平带电压漂移为0.96V,电荷存储密度达到4.17×1012cm-2.不同频率下Ge纳米晶在Al2O3介质中电荷存储特性随着频率的增加,平带电压的漂移和存储的电荷数减小.随着扫描速率的增加,平带电压的漂移和存储电荷也减小.

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