采用直流磁控溅射法在低温、100%Ar的无氧气氛中制备了光电性能优良的铟锡氧化物(ITO,In2O3:SnO2=90:10,质量百分比)薄膜,详细探讨了溅射时改变氩气压强对ITO薄膜结构以及光电性能的影响.结果表明:溅射时氩气压强越小,ITO薄膜的体心立方晶型越完整,导电性越好,但对可见光透过性的影响不大.当氩气压强为0.3Pa时,溅射薄膜性能最佳,其光透过率可达92.9%,电导率为8.9×10-4Ω·cm.
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