研究了氢离子注入后锗表面的剥离情况,观察发现其表面剥离的情况与Si相比有明显不同,H+注入后形成的微气泡层并没有导致Ge表面形成类似砂眼的凹坑,而是整个表层薄膜受H+膨胀压力导致其全部脱落.利用特殊的Ge的清洗工艺,完成了注H+的Ge片与热生长SiO2片的键合,通过热处理完成SiO2上的Ge薄膜转移,形成了GOI(Germanium-on-insulator)结构.采用扫描电镜(SEM)、原子力显微镜(AFM)、以及X射线四晶衍射对GOI的微结构进行了表征和分析.研究表明,获得的GOI中顶层Ge具有较好的晶体质量,锗和二氧化硅埋层界面陡直.
参考文献
[1] | Clarence J.Tracy;Peter Fejes;N.David Theodore;Papu Maniar .Germanium-on-lnsulator Substrates by Wafer Bonding[J].Journal of Electronic Materials,2004(8):886-892. |
[2] | Yaocheng Liu;Michael D Deal;James D Plummer .High -quality single-crystal Ge on insulator by liquid -phase epitaxy on Si substrates[J].Applied Physics Letters,2004,84(14):2563-2565. |
[3] | Zahler JM.;Ahn CG.;Zaghi S.;Atwater HA.;Chu C.;Iles P. .Ge layer transfer to Si for photovoltaic applications[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):558-562. |
[4] | Akatsu T;Bourdelle K K;Richtarch C et al.Study of extended-defect formation in Ge and Si after H ion implan tation[J].Applied Physics Letters,2005,86:181910. |
[5] | 李贺成 等.锗晶体断裂模数的测试[J].稀有金属,1995,19(02):107-111. |
[6] | Tong QY;Gutjahr K;Hopfe S;Gosele U;Lee TH .Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates[J].Applied physics letters,1997(11):1390-1392. |
[7] | Stephen W. Bedell;William A. Lanford .Investigation of surface blistering of hydrogen implanted crystals[J].Journal of Applied Physics,2001(3):1138-1146. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%