为了缩短SOI材料的改性研究周期,利用pseudo-MOS方法研究了SIMOX SOI材料的总剂量辐照效应.试验采用硅注入绝缘埋层后退火得到改性的SIMOX SOI材料,通过对比改性前后样品在辐照前后的pseudo-MOSFET ID-VG特性曲线,分析改性工艺的影响.研究结果表明,合适的改性工艺能有效提高材料抗总剂量辐照效应的能力,pseudo-MOS方法在大大缩短SOI材料改性周期的基础上,能准确、快捷地对材料的总剂量辐照效应进行表征.
参考文献
[1] | Cristoloveanu S.;Williams S. .Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers[J].IEEE Electron Device Letters,1992(2):102-104. |
[2] | Sorin Cristoloveanu;Sheng S Li.Electronical characterization of silicon-on-insulator materials and devices[M].New York:Kluwer Academic Publishers,1995:105-110. |
[3] | Sorin Cristoloveanu;Daniela Munteanu;Michael S. T. Liu .A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications[J].IEEE Transactions on Electron Devices,2000(5):1018-1027. |
[4] | Ravariu C;Rusu A;Dobrescu D.A mathematical model for threshold voltage of a partially and fully depleted MOS/SOI structure with a Gaussian distribution in the film[A].,2000:345-349. |
[5] | Ravariu C;Rusu A;Dobrescu D.An Analytical Model for Static Characteristics of a Pseudo-MOS Transistor with Neutral Channel[A].,2000:307-310. |
[6] | Jun B.;Fleetwood D.M.;Schrimpf R.D.;Zhou X.;Montes E.J.;Cristoloveanu S. .Charge separation techniques for irradiated pseudo-MOS SOI transistors[J].IEEE Transactions on Nuclear Science,2003(6):1891-1895. |
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