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在Pt(111)/Ti/SiO2/Si(100)衬底上,用脉冲激光沉积工艺分别制备出了(110)外延取向生长的(Ba0.65Sr0.35)TiO3/CaRuO3(BST/CRO)异质结构薄膜;BST/CRO异质结构薄膜由纳米晶团簇组成,最大的团簇晶粒达500 nm,平均晶粒尺寸在60~80 nm,薄膜厚度为650 nm.BST/CRO异质结薄膜均为表面平滑和致密结构.BST/CRO异质结薄膜的介电常数和介电调谐率分别高达851和78.1%.与纯BST薄膜比较,用CRO作电极,增益介电常数与介电调谐率.

参考文献

[1] J. H. Cho;K. C. Park .Comparison of epitaxial growth of PbZr_(0.53)Ti_(0.47)O_(3) on SrRuO_(3) and La_(0.5)Sr_(0.5)CoO_(3)[J].Applied physics letters,1999(4):549-551.
[2] Li A D;Wu D;Ge C Z et al.Structural and electrical properties of PbTiO3 thin films on conductive oxide LaNiO3 coated Si substrates prepared by sol-gel method[J].THIN SOLID FILMS,2000,375:220-223.
[3] Li QL.;Xiao CS.;Liu ZG.;Jiang Y. .Enhanced ferroelectric properties of Pb(Ta0.05Zr0.48Ti0.47)O-3 thin films on Pt/TiO2/SiO2/Si substrates using La0.67Sr0.33MnO3 buffer layers[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2000(2):107-110.
[4] Cho CR;Payne DA;Cho SL;UNIV ILLINOIS SEITZ MAT RES LAB URBANA IL 61801.;NORTHWESTERN UNIV DEPT PHYS & ASTRON EVANSTON IL 60208. .Solution deposition and heteroepitaxial crystallization of LaNiO3 electrodes for integrated ferroelectric devices[J].Applied physics letters,1997(20):3013-3015.
[5] A. K. TAGANTSEV;V. O. SHERMAN;K. F. ASTAFIEV;J. VENKATESH;N. SETTER .Ferroelectric Materials for Microwave Tunable Applications[J].Journal of electroceramics,2003(1/2):5-66.
[6] Xi X X;Li H C;Si W D et al.Oxide Thin Films for Tunable Microwave Devices[J].Journal of Electroceramics,2000,4(2-3):393-403.
[7] Ryen L;Wang X;Petrov P et al.Reduction of density of subgrain boundaries and misfit dislocations in epitaxial (001) SrTiO3 thin films:Effect on dielectric tenability[J].Journal of Applied Physics,1999,85(08):3976-3983.
[8] Wenbin Wu;K. H. Wong;C. L. Choy .Interface-oxygen-loss-controlled voltage offsets in epitaxial Pb(Zr_(0.52)Ti_(0.48))O_(3) thin-film capacitors with La_(0.7)Sr_(0.3)MnO_(3) electrodes[J].Applied physics letters,2004(21):5013-5015.
[9] Jeon Y A;Choi E S;Seo T S et al.Improvements in tunability of (Ba0.5Sr0.5)TiO3 thin films by use of metalorganic chemical vapor deposited (Ba,Sr)RuO3 interfacial layers[J].Applied Physics Letters,2001,79(07):1012-1014.
[10] Tang XG.;Chan HLW.;Ding AL. .Electrical properties of(Pb0.76Ca0.24)TiO3 thin films on LaNiO3 coated Si and fused quartz substrates prepared by a sol-get process[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2003(1/4):63-68.
[11] Ki Hyun Yoon;Ji-Hoon Sohn;Byoung Duk Lee;Dong Heon Kang .Effect of LaNiO_(3) interlayer on dielectric properties of (Ba_(0.5)Sr_(0.5))TiO_(3) thin films deposited on differently oriented Pt electrodes[J].Applied physics letters,2002(26):5012-5014.
[12] 蒋力立,黄开胜,唐新桂,陈王丽华.高度(100)取向的BST薄膜及其高介电调谐率[J].电子元件与材料,2005(12):29-31,34.
[13] High tunability in compositionally graded epitaxial barium strontium titanate thin films by pulsed-laser deposition[J].Applied physics letters,2003(17):2877-2879.
[14] 丁文,丁永平,孟中岩.Sol-Gel制备Ba1-x Srx TiO3系铁电薄膜的介电、调谐性能*[J].功能材料,2001(04):388-390.
[15] Xingui Tang;Jie Wang;Helen Lai-Wah Chan .Dielectric properties of columnar-grained (Ba_(0.75)Sr_(0.25))(Zr_(0.25)Ti_(0.75))O_3 thin films prepared by pulsed laser deposition[J].Journal of Crystal Growth,2005(3/4):453-457.
[16] Shaw TM.;McIntyre PC.;Trolier-McKinstry S. .The properties of ferroelectric films at small dimensions [Review][J].Annual review of materials research,2000(0):263-298.
[17] Jin HZ.;Zhu J.;Ehrhart P.;Fitsilis F.;Jia CL.;Regnery S.;Urban K. Waser R. .An interfacial defect layer observed at (Ba,Sr)TiO3/Pt interface[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):282-285.
[18] B. Chen;H. Yang;L. Zhao;J. Miao;B. Xu;X. G. Qiu;B. R. Zhao;X. Y. Qi;X. F. Duan .Thickness and dielectric constant of dead layer in Pt/(Ba_(0.7)Sr_(0.3))TiO_(3)/YBa_(2)Cu_(3)O_(7-x) capacitor[J].Applied physics letters,2004(4):583-585.
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