本文在分析表面扩散各向异性、二聚体和二聚体列影响的基础上,建立了Si(100)-(2×1) 表面上Si薄膜生长的Kinetic Monte Carlo(KMC)模型,利用该模型对薄膜生长的初始阶段进行了研究.结果表明:吸附原子的扩散距离随温度的变化满足指数函数L=L0AeT/C.在一定的入射率下存在一最佳成岛温度,该温度随入射率的增大而升高.随入射率的减小,薄膜逐渐从离散生长向紧致生长转变,表面扩散的各向异性越显著.
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