本文综述了纳米时代的高端硅基材料-SOI,sSOI和GOI,并结合介绍了上海微系统所和上海新傲科技有限公司相关的研究工作.
参考文献
| [1] | Mazuré;A J Auberton-Hervé.Engineering Wafers for the Nanotechnology Era[A].Grenoble,France,2005 |
| [2] | J P Colinge.Silicon-on-insulator Technology:Materials to VLSI[M].Bostion,MA,USA:Kluwer Academic Pub,2004 |
| [3] | G K Celler;S Cristoloveanu .[J].Journal of Applied Physics,2003,93:4955-4978. |
| [4] | [A].Holiday Inn Select,Niagara Falls,New York,2006 |
| [5] | Sadaka.Fabrication and Operation of Sub-50 nm Strained-Si on Si1-xGex Insulator (SGOI) CMOSFETs[A].,2004:209. |
| [6] | Zhenghua An;Yanjun Wu;Miao Zhang;Zengfeng Di,Chenglu Lin,Ricky K,Y.FU,Peng Chen,Paul K.W.Y.Cheung S.P.Wong .[J].Applied Physics Letters,2003,82:2452-2455. |
| [7] | Zengfeng Di;Paul K Chu;Miao Zhang;Weili Liu,Zhitang Song,Chenglu Lin .[J].Journal of Applied Physics,2005,97:64504-64510. |
| [8] | A V Y Thean.Performance of Super-Critical Strained-Si Directly on Insulator (SC-SSOI) CMOS Based on High-Performace PD-SOI Technology[A].,2005:134. |
| [9] | S Nakaharai;T Tezuka;N Hirashita;E Toyoda,Y Moriyama,N Sugiyama S Takagi .The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process[J].Semiconductor Science and Technology,2007,22:S103-S108. |
| [10] | 詹达,马小波,刘卫丽,朱鸣,宋志棠.用smart-cut方法制备GOI材料及研究[J].功能材料与器件学报,2007(03):207-212. |
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