非均匀退磁场对NiFe薄膜AMR元件性能的影响

1.北京科技大学材料物理系,北京,100083

2.北京科技大学材料物理系,北京,100083

3.北京科技大学材料物理系,北京,100083

4.北京科技大学材料物理系,北京,100083

5.北京科技大学材料物理系,北京,100083

基金项目: 国家自然科学基金(50471093) 国防科技应用基础研究基金(A1420060203)

Effect of non- uniform demagnetizing field on the anisotropic magnetoresistance of NiFe element

采用磁控溅射制备了NiFe各向异性磁电阻(AMR)薄膜,经过光学曝光及离子刻蚀将NiFe薄膜制成了宽度w=20μm、厚度t=20nm、长度l=2.5mm的AMR元件.测量了NiFe元件的磁电阻效应.考虑沿宽度方向退磁场的非均匀性,计算了磁电阻比率.结果表明,理论和实验符合.

[1]	Mcguire T R;Potter R I .Anisotropic magnetoresistance in ferromagnetic 3d alloys[J].IEEE Transactions on Magnetics,1975,MAG-11:1018.
[2]	Thompson D A;Romankiw L T;Mayadas A F .Thin film magnetoresistors in memory,storage and related applications[J].IEEE Transactions on Magnetics,1975,MAG-11:1039.
[3]	Kwiatkowski W;Tumanski S .The permalloy magnetoresistive sensors-properties and applications[J].Journal of Physics E:Scientific Instruments,1986,19:502.
[4]	Hu (Ben) H L;Kochan Ju;Han C C et al.5 Gb/in2 Recording with Dual Stripe AMR Heads and Low Noise Thin Film Disks[J].IEEE Transactions on Magnetics,1999,35:683.
[5]	Fluitman J H J .The Influence of Sample Geometry on the Magnetoresistance of Ni-Fe Films[J].Thin Solid Films,1973,16:269.
[6]	Anderson R L;Bajorek C H;Thompson D A .Numerical Analysis of a Magnetoresistive Transducer for Magnetic Recording Applications[J].AIP Conference Proceedings,1972,10:1445.
[7]	Casselman T N;Hanka S A.Calculation of the performance of a magnetoresistive Permalloy magnetic field sensor[J].IEEE Transactions on Magnetics,1980:461.
[8]	Collins A J;Jones R M .Review of un-shielded magnetoresistive heads[J].IERE Conf Proc,1979,49:1.

上一张下一张

计量

作者相关

文章评分