SiGe材料由于禁带带隙较窄和与Si工艺相兼容的优点,被广泛用于高频双极晶体管的制造中.实验把SiGe/Si异质结应用于功率器件方面,制造出了超快速软恢复SiGe/Si异质结功率开关二极管.与同结构的传统Si二极管相比,该功率二极管可以获得更短的反向恢复时间,低的正向压降,低的反向峰值电流,较软的恢复特性.30%Ge含量的SiGe二极管反向恢复时间比同结构的Si二极管缩了短四分之三,软度因子接近于1.这些性能的改进无需采用少子寿命控制技术,因而很容易集成于功率集成电路中.
Because of its low bandgap and compatibility with Si process, SiGe material is widely used in high-frequency bipolar transistors. Here we exploit the same benefits of SiGe material in a new application area, namely ultra fast power diodes. We have produced discrete p +(SiGe) -n- -n + + diodes. In addition to providing shorter reverse recovery time, lower forward voltage drop and peak reverse current compared with conventional Si diodes, the SiGe diodes have softer recovery characteristic. The reverse recovery time of SiGe diodes with 30 percentage Ge content are shorten by nearly three-quarter compared with Si diodes. The softness factor of Si diodes is far lower than one whereas that of SiGe diodes is close to one. Furthermore, the performance improvement doesnt resort to lifetime killing technology therefore it can be easily integrated into power IC.
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