通过实验研究了部分耗尽SOI NMOSFET总剂量辐射效应与辐射时的偏置状态的关系,实验结果表明TG(Transition Gate)是最恶劣的偏置状态.随后分别用MEDICI模拟软件和数值模型模拟掩埋氧化层中的电场强度与空穴俘获率.模拟结果合理地解释了实验结果,掩埋氧化层中的高电场和高空穴俘获率是TG为最恶劣偏置状态的主要原因.
The relation between partially depleted SOI NMOSFET total dose radiating effcot and bias status was experimentally studied. The experimentoll results showed that TG (Transition Gate)is the worst-case bias. And next. MEDICI simulation and a numerical model are utilized to simulate the electric field inside the buried oxide and fraction of hole capture, respectively. Simulation results explained experimental results reasonably. High electric field and high fraction of hole capture in buried oxide are the main reasons why TG is the worst-case bias.
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