高表面质量的pyrex玻璃对提高MEMS器件尤其是光学器件性能至关重要.本文采用TiW/Au+AZ4620厚胶作为多层复合刻蚀掩模,重点研究了玻璃湿法深刻蚀工艺中提高表面质量的方法,并分析了钻蚀和表面粗糙度产生的机理.结果表明,采用TiW/Au+AZ4620厚胶的多层掩膜比 TiW/Au掩膜能更有效地避免被保护玻璃表面产生针孔缺陷,减轻钻蚀.在纯HF中添加HCl,可以得到更光洁的刻蚀表面,当HF与HCl体积配比为10:1时,玻璃刻蚀面粗糙度由14.1nm减小为2.3nm.利用该工艺,成功实现了pyrex7740玻璃的150μm深刻蚀,保护区域的光学表面未出现钻蚀针孔等缺陷,同时完成了金属引线和对准标记的制作,为基于玻璃材料的MEMS器件制作提供了一种新的加工方法.
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