利用标准SIMOX材料制作了部分耗尽环型栅NMOS晶体管,并在ON偏置条件下分别对其进行了10keV X射线及60Coγ射线总剂量辐照实验.实验结果表明,在两种辐射条件下NMOS晶体管的背栅阈值电压漂移量都会随着辐照剂量的升高而趋于饱和.实验分析并研究了这种现象的机理,并发现在较低的辐照剂量下60Coγ射线造成的背栅阈值电压漂移量较大,但在高剂量条件下 X射线造成的漂移量将超过60Coγ射线.
参考文献
| [1] | Schwank J.R.;Shaneyfelt M.R. .Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides[J].IEEE Transactions on Nuclear Science,2000(6):2175-2182. |
| [2] | Paillet P;Schwank J R et al.Comparison of Charge Yield in MOS Devices for Difierent Radiation Sources[J].IEEE Tram Nucl Sci,2002,49(06):2656-2663. |
| [3] | Mclean F B .A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structure[J].IEEE Tram Nucl Sci,1980,27(06):1651-1657. |
| [4] | Schwank J R;Winokur PS et al.Radiation-Induced Interface-State Generation in MOS Devices[J].IEEE Tram Nucl Sci,1986,33(06) |
| [5] | Schwank J R;Dawes W R et al.Irradiated Silicon Gate MOS Device Bias Annealing[J].IEEE Transactions on Nuclear Science,1983,30(06):4100-4104. |
| [6] | Benedetto J M;Boesch HG et al.Hole Removal in Thin -Gate MOSFET's by Tunneling[J].IEEE Transactions on Nuclear Science,1985,32(06):3916-3920. |
| [7] | Boesch Jr.H E;McLean F B et al.Saturation of threshold voltage shift in MOSFET's at high total dose[J].IEEE Transactions on Nuclear Science,1986,33(06):1191-1197. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%