用共蒸发法在室温下制备了ZnTe:Cu多晶薄膜,利用XRD、AFM和XPS等测试技术对样品进行了表征,研究了掺Cu浓度和退火温度对薄膜物相和晶粒度的影响,分析了薄膜表面的元素状态.根据铜离子的变价行为对异常的电阻率温度关系作了解释.并确定了最佳掺铜浓度和退火温度.
ZnTe:Cu polyerystalline thin films prepared by vacuum co-evaporation technique were characterized by X-ray Diffraction(XRD),Atomic Force Microscope (AFM) and X-ray Photoelectron Spectroscope (XPS) measurements.The impact of copper-doping concentration and annealing temperature upon structure and surface morphology of ZnTe:Cu thin films were studied and elements existent states were analyzed.The abnormal ρ～T curve was explained based on changes of copper ions valence.And the optimum copper-doped concentration and annealing temperature were determined.
参考文献
| [1] | Chang C Y;Fang Y K;Sze S M .Specific contact resistance of metal-semiconductor barriers[J].Solid-State Electronics,1971,14(07):541-550. |
| [2] | Riony D;Niles D W;Hochst H .ZnTe A potential interlayer to form low resistance back contacts in CdS/CdTe sloarcells[J].Journal of Applied Physics,1993,73(12):8383-8385. |
| [3] | Gessert T A;Mason A R;Reedy R C et al.Development of rf sputtered,Cu-doped ZnTe for use as contact interface layer to P-CdTe[J].Journal of Electronic Materials,1995,24(10):1443-1449. |
| [4] | Tang J;Mao D;Ohno T R.Properties of ZnTe:Cu thin films and CdS/CdTe/ZnTe solar cells[A].,1997:439-442. |
| [5] | Zhang Jingquan;Feng Lianghuan;Cai Wei et al.The structural phase transition and mechanism of abnormal tenperature dependence of conductivity in ZnTe:Cu polycrystalline thin films[J].Thin Solid Films,2002,414:113-118. |
| [6] | Gessert TA.;Sheldon P.;Swartzlander AB.;Niles D.;Coutts TJ.;Mason AR. .DEVELOPMENT OF CU-DOPED ZNTE AS A BACK-CONTACT INTERFACE LAYER FOR THIN-FILM CDS/CDTE SOLAR CELLS[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1996(3 Pt.1):806-812. |
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