用射频磁控溅射法制备了FeCuNbSiB多层膜,制备态样品的GMI效应在驱动电流频率为12MHz时达到最大,为44.3%.利用复数磁导率和等效电路讨论了该多层膜的磁化过程,及与GMI效应的关系.外加直流磁场抑制磁畴运动,在等效电路中与抵消并联电路相关.样品磁化的特征弛豫频率在12MHz左右,与出现最大磁阻抗变化的频率接近.
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