相变存储技术是纳电子器件发展的主流技术之一,利用其电脉冲操作下的纳秒级的可逆相变过程制备的相变存储器(PCRAM),在嵌入式与大容量存储方面有巨大的商用价值与应用前景,已成为国际大公司开发的热点,PCRAM芯片容量与技术以超常规的速度发展,同时,针对纳米尺度的可逆相变机理、纳米尺度可逆相变的有效控制、低功耗的器件结构、已成为国际上科研界的研究热点,本文对上述情况进行综述,进一步给出我国的PCRAM的研究现状、工业基础、合作状况与展望.
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