当硬盘驱动器的磁头飞高降至5nm以下时,磁头与磁盘间的分子间作用力不能忽略.以皮米磁头和飞米磁头为模型,模拟了分子间作用力对飞高低于5nm的磁头总承载力的影响.模拟结果表明,分子间作用力改变了飞高低于5nm的磁头承载特性.分子间吸引力使总承载力减小,甚至出现负值,以致使磁头失去承载能力.当飞高进一步降低时,分子间斥力的作用显现出来.由于分子间引力和斥力的作用范围不同,磁头有一段失去承载能力的临界飞高区间.磁头的尺寸因子不同,临界飞高区间也有差别.
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