摘要是本文提出了一种应用于微机电系统嵌入式传感器片上系统新工艺上的静电放电防护器件的电路结构.这个静电放电防护结构采用了以地端为参考电位的,多指条晶闸管类器件,包括以下几个部分1)输入/输出防护,2)电源钳位3)微机电处理过程中的内部传感器电极.本工作也提出了一种在有限的芯片面积下实现静电放电防护等级要求的多指条版图布局.这种静电放电防护设计体系在器件级和片上系统级都得到了测试和验证,有效性和鲁棒性都得到了证实.测试数据表明采用了本防护体系的片上系统在不引入闩锁,漏电流只有10-10A的情况下承受了4.1kV的人体放电模式的静电测试.
An on -chip electrostatic discharge (ESD) protection scheme is demonstrated for an emerging technology of microelectromechanieal systems (MEMS) - based embedded sensor (ES) system - on - a - chip (SoC). The ESD protection scheme is implemented using ground - referenced muhifinger thyris- tor- type devices optimized for 1 ) the input/output (I/O) protection, 2) the power supply clamp, and 3) the internal sensors' electrodes during the micromachining process. A multiply finger layout scheme was also developed to the ESD protection level under the constraint of chip size. The ESD protection de- sign methodology was tested and verified at both the device and SoC levels, and its effectiveness and ro- bustness have been illustrated. Experimental results showed that the SoC passed a 4.1 kV Human Body Model ESD stress with no latchup induced and a very low leakage current of 10-10 A.
参考文献
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