三层键合Glass-Silicon-Glass(GSG)结构在光MEMS、微惯性器件、微流体芯片、射频MEMS以及低成本圆片级封装技术领域里是一项重要技术.基于MEMS精密研磨抛光工艺和阳极键合,结合新型玻璃通孔的腐蚀工艺,开展了中间硅片厚度可控的三层阳极键合工艺研究,成功制备了带有通孔的GSG微流体器件.总厚度1360μm,中间硅片厚度60μm,通孔直径100μm,孔间距(圆孔的中心距离)200μm,孔内边缘圆滑无侧蚀.三层结构的键合几率为90%,为探索多层键合技术打下坚实基础.
参考文献
| [1] | Glass-to-glass anodic bonding with standard IC technology thin film as in-termediate layers[S]. |
| [2] | Jim Wei;Sharon M. L. Nai;C. K. Stephen Wong;Zheng Sun;Loke Chong Lee .Low Temperature Glass-to-Glass Wafer Bonding[J].IEEE transactions on advanced packaging,2003(3):289-294. |
| [3] | Kristian P Larsen;Jan T Ravnkilde.SOI silicon on glass for optical MEMS,the 12th international conference on solid state sensors[A].Boston,Massachusetts,2003 |
| [4] | Haitao Ding;Zhenchuan Yang;zhiyong Chen.Awafer-level protective technique using-glass caps for MEMS gyroscopes[M].IEEE,2006 |
| [5] | Herwig Kirchberger;Paul Lindner;Markus Wimplinger.Novel bonding technologies for wafer-level transparent pack-aging of MOEMS[J].DTIP of MEMS & MOEM,2007 |
| [6] | Miki N;Zhang X;Khanna R.A study of multi-stack silicon-direct wafer bonding for MEMS manufaetur-ing[M].IEEE,2002 |
| [7] | wei J;Wang Z P;Xie H.Role of bonding temperature and voltage in silicon-glass anodic bonding[A].,2002 |
| [8] | 王蔚,刘晓为,刘玉强,王喜莲,张建才,张雪梅.静电键合在高温压力传感器中的应用[J].传感器技术,1999(01):42-44. |
| [9] | 黄庆安.硅微机械加工技术[M].北京:科学出版社,1996 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%