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采用脉冲激光沉积技术在SrTiO3,(001)单晶衬底上制备出钙钛矿结构La0.67 Sr0.33 MnO3,(LSMO)外延薄膜,通过X射线衍射仪和原子力显微镜表征其晶体取向与表面形貌,并对Ag-LSMO结构的室温电脉冲诱发可逆变阻效应进行研究.结果表明,在±4V、50ns对称脉冲作用下,LSMO膜层电阻发生高低转变,且变阻范围随脉冲幅值电压、脉冲宽度、脉冲数日等参数的变化而变化.该效应表现出良好的疲劳特性与非挥发存储特性,有望应用于新型不挥发存储器、传感器、可变电阻等电子元器件的研制.

参考文献

[1] 刘俊明,王克锋.稀土掺杂锰氧化物庞磁电阻效应[J].物理学进展,2005(01):82-130.
[2] 王克锋,刘俊明.稀土锰氧化物的低场磁电阻效应[J].物理学进展,2003(02):192-211.
[3] Y. Tokura;Y. Tomioka .Colossal magnetoresistive manganites[J].Journal of Magnetism and Magnetic Materials,1999(1/3):1-23.
[4] Salamon MB.;Jaime M. .The physics of manganites: Structure and transport [Review][J].Reviews of Modern Physics,2001(3):583-628.
[5] Prellier W;Lecoeur P;Mercey B .Colossal-magnetore-sistive manganite thin films[J].Journal of Physics:Condensed Matter,2001,13:915-944.
[6] Furukawa N;Motome Y .Colossal magnetoresistance and quenched disorder in manganese oxides[J].Journal of the Physical Society of Japan,2005,74(zk):203-207.
[7] S. Q. Liu;N. J. Wu;A. Ignatiev .Electric-pulse-induced reversible resistance change effect in magnetoresistive films[J].Applied physics letters,2000(19):2749-2751.
[8] Livesay E.A.;Dugdale S.B.;Santi G.;Jarlborg T.;West R.N. .Fermi surface of the colossal magnetoresistance perovskite La0.7Sr0.3MnO3[J].Journal of Physics. Condensed Matter,1999(25):L279-L285.
[9] Joonahoe Dho;Kim Y N;Hwang Y S et al.Strain-ln-duced magnetic stripe domains in La0.7 Sr0.3 MnO3 thin films[J].Applied Physics Letters,2003,82(09):1434-1436.
[10] S. Y. Yang;W. L. Kuang;Y. Liou .Growth and characterization of La_(0.7)Sr_(0.3)MnO_3 films on various substrates[J].Journal of Magnetism and Magnetic Materials,2004(3):326-331.
[11] Xie YW;Sun JR;Wang DJ;Liang S;Shen BG .Reversible electroresistance at the Ag/La0.67Sr0.33MnO3 interface[J].Journal of Applied Physics,2006(3):33704-1-33704-5-0.
[12] Becket T;Streng C;Luo Y et al.Intrinsic inhomogenei-ties in manganite thin films investigated with scanning tun-neling spectroscopy[J].Physical Review Letters,2002,89(23):237203.
[13] Chen T L;Li X M;Dang R et al.Field-induced resist-ance switching of La0.7 Ca0.3 MnO3-z films epitaxially grown on Ir/MgO buffered Si(001)substrates[J].Thin Solid Films,2005,488:98-102.
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