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  4. ZnO宽带隙半导体及其基本特性

功能材料与器件学报 , 2008, 14(3): 566-574. doi: 10.3969/j.issn.1007-4252.2008.03.002

ZnO宽带隙半导体及其基本特性

贺永宁 1, , 朱长纯 2, , 侯洵 3,

1.西安交通大学电子与信息工程学院电子科学与技术系,西安,710049

2.西安交通大学电子与信息工程学院电子科学与技术系,西安,710049

3.西安交通大学电子与信息工程学院电子科学与技术系,西安,710049

基金项目:   西安交通大学985平台建设培植项目   国家"211"工程建设项目   西安交通大学校科研和教改项目  

关键词： ZnO , 宽带隙半导体 , 晶体缺陷 , 电子输运 , p型掺杂

Recent advances in characteristics of ZnO semiconductor

ZnO半导体是宽带隙半导体领域中继GaN和SiC之后的研究热点.同时,作为一种氧化物半导体,ZnO半导体在能带结构、晶格缺陷、抗辐照特性以及电学性质等方面具有特殊性,已有的研究中还存在一些不同的认识.本工作在阐述ZnO的晶体结构和基本性质基础之上,对其能带结构和缺陷特征、电子输运以及P型掺杂等主要的半导体特性研究现状进行了较为全面综述和分析.由于ZnO半导体具有高的激子束缚能、优良的电子输运性质、强抗辐照特性以及低成本和环境友好等显著特征,它是未来半导体光电子领域极具应用潜力的新一代宽带隙半导体材料,但是到目前为止,p型掺杂技术仍然是ZnO半导体器件面临的最大挑战.

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