本文通过在ZnO/Si(111)衬底上,利用JCK-500A型射频磁控溅射系统溅射氧化镓靶得到氧化镓薄膜.然后将硅基Ga2O3置于管武石英炉中,在850℃的氨化温度下氨化15min后,成功制备出GaN薄膜,该薄膜由正六边形的晶粒组成.X射线衍射(XRD)表明GaN具有六方纤锌矿结构,晶格常数为a=0.318nm和c=0.518nm.X射线光电子能谱(XPS)的测试确定了样品中Ga-N键的形成,并且Ga和N的化学计量比为1:1.用扫描电镜(SEM)和原子力显微镜(AFM)观察发现,样品表面非常光滑和平整.透射电镜(TEM)表明薄膜由正六边形晶粒组成.选区电子衍射(SAED)进一步验证了GaN薄膜的六方纤锌矿结构.最后,简单地讨论了其生长机制.
Ga2O3 thin films were deposited on ZnO/Si( 111 ) substrates by sputtering Ga2O3 target in a JCK -500A radio frequency magnetron sputtering system. Then GaN nanostructured thin films comprised of regular hexagonal crystal grains have been successfully synthesized by ammoniating Ga2O3 films at the temperature of 850℃ for 15 rain in a quartz tube. X -ray diffraction (XRD) reveals that the synthesized GaN is of a hexagonal wurtzite structure with lattice constants a =0.318 nm and c =0.518 nm. X-ray photoelectron spectroscopy (XPS) confirms the formation of bonding between Ga and N, and yields the surface stoichiometry of Ga:N of 1:1. Scanning electron microscope (SEM) and atom force microscope (AFM) are taken to examine the morphology of GaN, indicating that the as - grown GaN films are smooth and uniform. Transmission electron microscope (TEM) demonstrates the films are composed of the regular hexagon grains and selected -area electron diffraction (SAED) further shows that the GaN is a hexagonal wurtzite structure. Finally, the growth mechanism is also briefly discussed.
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