采用0.18μm标准工艺制备出基于Sn掺杂Ge2Sb2Te5相变材料的相变存储器器件单元,利用自行设计搭建的电学测试系统研究了其存储性能.结果表明:Sn的掺杂没有改变Ge2Sb2Te5的相变特性,其相变阚值电压和阈值电流分别为1.6V和25μA;实现了器件单元的非晶态(高阻)与晶态(低阻)之间的可逆相变过程;器件单元中相变材料结晶所需电流最低为1.78mA(电流宽度固定为100ns)、结晶时间大于80ns(电流高度固定为3mA);相变材料非晶化脉冲电流宽度为30ns时,所需电流大于3.3mA;与Ge2Sb2Te5相比,Sn的掺杂降低了SET操作的脉冲电流宽度,提高了结晶速度,有利于提高相变存储器的存储速度.
参考文献
| [1] | Ovshinsky S R .Reversible Electrical Switching Phenomena in Disordered Structures[J].Physical Review Letters,1968,21:1450-1455. |
| [2] | 封松林,宋志棠,刘波,刘卫丽.硫系化合物随机存储器研究进展[J].微纳电子技术,2004(04):1-7,39. |
| [3] | Lai S;Lowrey T.OUM -A 180nm nonvolatile memory cell element teehnolngy for stand alone and embedded applications[J].IEDM Technical Digest,2001:803-806. |
| [4] | Friedrich I.;Njoroge W.;Franz P.;Wuttig M.;Weidenhof V. .Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements[J].Journal of Applied Physics,2000(9 Pt.1):4130-4134. |
| [5] | Happ T D;Breitwisch M;Schrott A.Novel one-mask self-heating pilar phase change memory[A].,2006:120-121. |
| [6] | Horii H;Yi J H;Park J H.Phase-change chalcogenide nonvolatile RAM completely based on CMOS technology[A].,2003:29-31. |
| [7] | XIA Ji-Lin,LIU Bo,SONG Zhi-Tang,FENG Song-Lin,CHEN Bomy.Electrical Properties of Ag-Doped Ge2Sb2Te5 Films Used for Phase Change Random Access Memory[J].中国物理快报（英文版）,2005(04):934-937. |
| [8] | XU Cheng,LIU Bo,SONG Zhi-Tang,FENG Song-Lin,CHEN Bomy.Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory[J].中国物理快报（英文版）,2005(11):2929-2932. |
| [9] | Yun Ling;Yinyin Lin;Baowei Qiao;Yunfeng Lai;Jie Feng;Tingao Tang;Bingchu Cai;Bomy Chen .Effects of Si Doping on Phase Transition of Ge_2Sb_2Te_5 Films by in situ Resistance Measurements[J].Japanese journal of applied physics,2006(12/16):L349-L351. |
| [10] | Liu B;Song ZT;Zhang T;Xia JL;Feng SL;Chen B .Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1/2):49-55. |
| [11] | Rivera-Rodriguez C;Prokhorov E;Trapaga G et al.Mechanism of crystallization of oxygen-doped amorphous GelSb2Te4 thin films[J].Journal of Applied Physics,2004,96:1040-1046. |
| [12] | 梁爽,宋志棠,刘波,陈小刚,封松林.相变存储器器件单元测试系统[J].半导体技术,2006(08):614-617. |
| [13] | Woo Yeong Cho;Beak-Hyung Cho;Byung-Gil Choi;Hyung-Rok Oh;Sangbeom Kang;Ki-Sung Kim;Kyung-Hee Kim;Du-Eung Kim;Choong-Keun Kwak;Hyun-Geun Byun;Youngnam Hwang;SuJin Ahn;Gwan-Hyeob Koh;Gitae Jeong;Hongsik Jeong;Kinam Kim .0.18-μm 3.0-V 64-Mb Nonvolatile Phase-Transition Random Access Memory (PRAM)[J].IEEE Journal of Solid-State Circuits,2005(1):293-300. |
| [14] | Kojima R.;Yamada N. .Acceleration of crystallization speed by Sn addition to Ge-Sb-Te phase-change recording material[J].Japanese journal of applied physics,2001(10):5930-5937. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%