计算了外加太赫兹(THz)辐射下高电子迁移晶体管(HEMT)的导纳和探测响应率与入射THz辐射频率的依赖关系.结果表明,随着栅下沟道长度的增大,导纳和响应率的峰出现红移,同时高度有所下降;随着栅电压的增大,导纳和响应率的峰出现蓝移,并且高度有所上升.这些研究在太赫兹等离子探测器的设计上有着重要的作用.
参考文献
| [1] | Cao J C .Research progress of terahertz sources and detec-tor[J].Physica,2006,35:953-956. |
| [2] | 贾刚,汪力,张希成.太赫兹波（TeraHertz）科学与技术[J].中国科学基金,2002(04):200-203. |
| [3] | Ferguson B;Zhang X C .Review of terahertz science an technology[J].Physica,2003,05:286-289. |
| [4] | Luryi S;Zaslavsky A.Modem Semiconductor Devices[M].New York:wiley,1998:253-256. |
| [5] | Ryzhii V;Willander M;Ryzhii M;Khmyrova I .Hetero-structure laser-transistors controlled by resonant-tunnel-ling electron extraction[J].Semiconductor Science and Technology,1997,12:431-438. |
| [6] | Satou A.;Khmyrova I.;Ryzhii V.;Shur MS. .Plasma and transit-time mechanisms of the terahertz radiation detection in high-electron-mobility transistors[J].Semiconductor Science and Technology,2003(6):460-469. |
| [7] | Ma M R;Chen Y L.Resonant detection of terahertz radia-tion utilizing plasma waves in high-electron-mobility transistors[J].Chinese Physics,2007 |
| [8] | Ryzhii V.;Shur M. .Tunnelling- and barrier-injection transit-time mechanisms of terahertz plasma instability in high-electron mobility transistors[J].Semiconductor Science and Technology,2002(11):1168-1171. |
| [9] | Ryzhii V;Satou A;Khmyrova I;Chaplik A;Shur MS .Plasma oscillations in a slot diode structure with a two-dimensional electron channel[J].Journal of Applied Physics,2004(12):7625-7628. |
| [10] | Ryzhii V.;Shur M. .Plasma instability and nonlinear terahertz oscillations in resonant-tunneling structures[J].Japanese journal of applied physics,2001(2A):546-550. |
| [11] | Ryzhii V;Satou A;Knap W;Shur MS .Plasma oscillations in high-electron-mobility transistors with recessed gate[J].Journal of Applied Physics,2006(8):84507-1-84507-5-0. |
| [12] | V. Ryzhii;I. Khmyrova;M. Shur .Terahertz photomixing in quantum well structures using resonant excitation of plasma oscillations[J].Journal of Applied Physics,2002(4):1875-1881. |
| [13] | Deng Y;Knap W;Rumyantsev s.Subterahertz de-tection by high election mobility transistors at large for-ward gate bias[A].Newark USA,2002:135-142. |
| [14] | Knap W;Deng Y;Rumyantsev S et al.Resonant detec-tion of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors[J].Applied Physics Letters,2002,81:4637-4639. |
| [15] | Deng Y;Knap W;Rumyantsev s.Detection of ter-ahertz radiation by plasma waves in field effect tran-sistors.Terahertz Electronics Proceedings[A].Cambridge,UK,2002:19-22. |
| [16] | Taiichi O;Mitsuhiro H;Osamu O .Terabertz plasma wave resonance of two-dimensional electrons in InGaP/In-GaAs/GaAs high-electron-mobility transistors[J].Applied Physics Letters,2004,85:2119-2121. |
| [17] | Abdul Manaf Hashim;Tamotsu Hashizume;Kouichi Iizuka;Hideki Hasegawa .Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2DEG and interdigital slow waves[J].Superlattices and microstructures,2003(3/6):531-537. |
| [18] | A. Satou;V. Ryzhii;I. Khmyrova;M. Ryzhii;M. S. Shur .Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions[J].Journal of Applied Physics,2004(4):2084-2089. |
| [19] | Dyakonov M.;Shur M. .Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid[J].IEEE Transactions on Electron Devices,1996(3):380-387. |
| [20] | Dyakonov M;Shur M .Plasma wave electronics:Novel terahertz devices usting two Dimensional electron fluid[J].IEEE Transactions on Electron Devices,1996,43:1640-1645. |
| [21] | Lü J Q;Shur M .Terabertz detection by high-electron-mobility transistor:Enhancement by drain bias[J].Applied Physics Letters,2001,23:2587-2588. |
| [22] | Shur M;Lü J-Q;Dyakonov M.TERAHERTZ APPLI-CATIONS OF PLASMA WAVE ELECTRONICS[A].IEEE MTT-S International Microwave Symposium Digest,1999:937-940. |
| [23] | Dyakonov M;Shur M.Plasma Wave Electronics:Tera-hertz Detectors and Sources Using Two Dimensional Elec-tronic Fluid in High Electron Mobility Transistors[A].Tenerife,Spain,1997:105-108. |
| [24] | Cao J C .Interband Impact Ionization and Nonlinear Ab-sorption of Terabertz Radiation in Semiconductor Hetero-structures[J].Physical Review Letters,2003,91:237401-1-237401-4. |
| [25] | Cao J C;Lei X L .Multiphoton-assisted absorption of terahertz radiation in InAs/AISb heterojunctions[J].Physical Review B,2003,67:085309-1-085309-5. |
| [26] | X. W. Mi;J. C. Cao;C. Zhang .Optical absorption in terahertz-driven quantum wells[J].Journal of Applied Physics,2004(3):1191-1195. |
| [27] | Lü J-Q;Shur M S .Terabertz detection by high-elec-tron-mobility transistor:Enhancement by drain bias[J].Applied Physics Letters,2001,78:2587-2588. |
| [28] | Dmitriev A P;Kachorovskii V;Shur M S .Plasma wave instability in gated coUisionless two-dimensional electron gas[J].Applied Physics Letters,2001,79:922-924. |
| [29] | Ma MR;Chen YL;Wang C .Effect of magnetic field on the terahertz radiation detection in high electron mobility transistors[J].Chinese physics,2006(11):2657-2660. |
| [30] | Cao JC.;Lei XL. .Synchronization and chaos in miniband semiconductor superlattices[J].Physical Review.B.Condensed Matter,1999(3):1871-1878. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%