欢迎登录材料期刊网

材料期刊网

高级检索

采用了H3PO4/H2O2系化学腐蚀液对GSMBE外延的InGaAs/InP和InAIAs/InP材料湿法腐蚀特性进行了研究,研究了不同浓度和配比对于腐蚀速率和形貌影响.结果表明该腐蚀液体系具有良好的均匀性,腐蚀速率随浓度呈指数关系,表面形貌基本不受浓度影响.在增加腐蚀液中双氧水含量时,腐蚀速率先增大后减小,表面形貌良好;增加磷酸浓度腐蚀速率亦有增大趋势,表面出现尖锥状小丘.并对腐蚀液配比变化对腐蚀特性影响及腐蚀机理进行了讨论分析.

参考文献

[1] Pearton S J .Critical issues of Ⅲ-Ⅴ compound semicon-ductor processing[J].Materials Science and Engineering B,1997,44:1-7.
[2] Pasquariello D.;Bjorlin E.S.;Lasaosa D.;Chiu Yi.-J.;Piprek J.;Bowers J.E. .Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices[J].Journal of Lightwave Technology: A Joint IEEE/OSA Publication,2006(3):1470-1477.
[3] Cho H K;Lee J Y;Lee B et al.Control of wet-chemical thickness in the vertical cavity surface emitting laser strut-ture by in suit laser reflectometry[J].Journal of Vacuum Science and Technology,1999,17(06):2626-2629.
[4] Liu W.Fundamentals of Ⅲ-Ⅴ Devices:HBTs,MESFETs and HFETs/HEMTs[M].New York:John Wiley and Sons,Inc,1999:32-34.
[5] Kitano T;Izumi S;Minami H et al.Selective wet chemical etching for highly uniform GaAs/AlGaAs heterostructue field effect transistors[J].Journal of Vacuum Science and Technology,1997,15(01):167-170.
[6] Higuchi K;Uchiyama H;Shiota T et al.Selective wet-etching of InGaAs on InAIAs using adipic acid and its ap-plication to InAlAs/InGaAs HEMTs[J].Semiconductor Science and Technology,1997,12:475-480.
[7] Clawson A R .Guide to references on Ⅲ-Ⅴ semiconductor chemical etching[J].Materials Science and Engineering,2001,31:1-438.
[8] Stano A .Chemical Etching Characteristics of InGaAs/InP and InAIAs/InP Heterostructures[J].Journal of the Electrochemical Society,1987,134(02):448-452.
[9] Bandaru P;Yablonovitch E .Semiconductor Suface-Mole-cule Interactions[J].Journal of the Electrochemical Society,2002,149(11):599-602.
[10] Mouton A;Sundararaman C;Lafontaine H et al.Etching of InP by H3PO4,H2 O2 Solution[J].Japanese Journal of Applied Physics,1990,29(10):1912-1913.
[11] Notten P;Meerakker J;Kelly J.Etching of Ⅲ-Ⅴ Semi-conductors:A Electrochemical Approach[M].New York:Elsevier Advanced Technology,1991:237-241.
[12] Tuck B .The chemical polishing of semiconductors[J].Journal of Materials Science,1975,10:321-339.
[13] 黄辉,王兴妍,任晓敏,王琦,黄永清,高俊华,马晓宇.HCl/HF/CrO3溶液对 InGaAs/InGaAsP的选择性湿法刻蚀--应用于楔形结构的制备[J].半导体学报,2005(07):1469-1474.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%