基于器件物理分析的方法,结合沟道电势二维解析模型,分析比较了漏极引致势垒降低效应(DIBL effect)对6H-及4H-SiC MESFET沟道势垒,阈值电压,以及亚阈值电流的影响,并研究了其温度特性.研究表明DIBL效应的存在使SiC MESFET的沟道势垒最小值随栅长及温度发生变化,并带来阈值电压及亚阈值电流的变化.栅长越大,温度越高,亚阚值倾斜因子Ns越小,栅压对沟道电流的控制能力增强,最终造成亚阈值电流随栅压的变化越快.
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