高分辨率X射线衍射技术被用来分析基于InP衬底的应变的InGaAs和InAlAs单层材料和应变补偿的InGaAs/InAlAs超晶格材料.通过倒空间mapping得到的单层材料的错向角大约为10-3度,可以忽略不计.通过摇摆曲线得到了单层材料的组分和体失配度,接着单层材料的结果被用来分析在相同的条件下利用MBE技术生长的超晶格材料.利用倒空间mapping精确得到了超晶格的平均垂直失配度和各层的厚度,通过X射线模拟软件得到的超晶格材料的模拟曲线和实测曲线吻合的很好.
High resolution x - ray diffraction (HRXRD) is used to analyze the structure of InP - based single -layer InGaAs and InAlAs materials and strain -compensated InGaAs/InA1As superlattice materi-al. The calculated value of the misorientation - angle of single - layer materials according to the recipro-cal space mapping is about 10-3 degree and it can be neglected. Then the composition and bulk mismatch of the single - layer materials are obtained through the rocking curves. The results of the single - layer materials are then used to analyze the superlattice material grown under the same conditions with molecule beam epitaxy (MBE) technology. The average perpendicular mismatch and the thickness of the superlat-tice are obtained accurately from the reciprocal space mapping. The simulated curve of the superlattice material through the x- ray simulation software matches very well with the measured curve.
参考文献
| [1] | Miller B I;Koren U;Young M G .Strain -compensated strained-layer superlattices for 1.5 um wavelength lasers[J].Applied Physics Letters,1991,58(18):1952-1954. |
| [2] | Mei X B;Bi W G;Tu C W .Quantum confined Stark effect near 1.5 um wavelength in InAs0.53P0.47/Ga yInl-yP strain-balanced quantum wells[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1996,14(03):2327-2330. |
| [3] | Mei X B;Loi K K;Wieder H H .Strain-compensated InAsP/GaInP multiple quantum wells for 1.3 um waveguide modulators[J].Applied Physics Letters,1996,68(01):90-92. |
| [4] | Yang QK.;Chen JX.;Li AZ. .High resolution x-ray diffraction study of Bragg peak width in strained InGaAs/InAlAs/InP heterostructures[J].Journal of Applied Physics,1998(11 Pt.1):5792-5796. |
| [5] | Chang J C P;Chin T P;Kavanagh K L .High-resolution x-ray diffraction of InAlAs/lnP superlattices grown by gas source molecular beam epitaxy[J].Applied Physics Letters,1991,58(14):1530-1532. |
| [6] | Vandenberg J M;Harem R A;Panish M B .High-resolution x-ray diffraction studies of lnGaAs(P)/InP superlatrices grown by gas-source molecular-beam epitaxy[J].Journal of Applied Physics,1987,62(04):1278-1283. |
| [7] | Vandenberg J M;Gershoni D;Harem R A .Structure perfection of lnGaAs/InP strained-layer superlattices grown by gas source molecular-beam epitaxy:A high-resolution x-ray diffraction study[J].Journal of Applied Physics,1989,66(08):3635-3638. |
| [8] | Brian R Bennett;Jesus A del Alamo .Mismatched InGaAs/InP and InAIAs/InP heterostructures with high crystalline quality[J].Journal of Applied Physics,1993,73(07):3195-3202. |
| [9] | Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy[J].Journal of Applied Physics,2003(7):4219-4225. |
| [10] | Marsh J H;Roberts J S;Claxton P A .Photoluminescence from In0.53Ga0.47As/ InP quantum wells grown by molecular beam epitaxy[J].Applied Physics Letters,1985,46(12):1161-1163. |
| [11] | Juang F-Y;Bhattacharya P K;Singh J .Determination of the microscopic quality of InGaAs-InAlAs interfaces by photoluminescence-Role of interrupted molecular beam epitaxial growth[J].Applied Physics Letters,1986,48(04):290-292. |
| [12] | Chu Ryang Wie .High resolution X -ray diffraction characterization of semiconductor structures[J].Materials Science and Engineering,1994,R13:13-14. |
| [13] | Pizani PS.;Lanciotti F.;Groenen J.;Carles R.;Maigne P. Gendry M.;Boschi TM. .Alloying effects on the critical layer thickness in InxGa1-xAs/InP heterostructures analyzed by Raman scattering[J].Applied physics letters,1998(4):436-438. |
| [14] | Woo-Young Choi;Clifton G Fonstad .Determination of the layer structure of embedded strained InGaAs multiple quantum wells by high resolution X-ray diffraction[J].Applied Physics Letters,1993,62(22):2815-2817. |
| [15] | Marschner T.;Verschuren CA.;Leys MR.;Wolter JH.;Brubach J. .X-ray interference effect as a tool for the structural investigation of GaInAs/InP multiple quantum wells[J].Journal of Applied Physics,1998(7):3630-3637. |
| [16] | Sun L;Zhang D H;Zheng H Q .High -resolution X -ray diffraction study of strained lnGaAs/ InP multiple quantum well structures grown using all solid sources[J].Materials Science in Semiconductor Processing,2002,4:631-636. |
| [17] | Gray A L;Newell T C;Lester L F .High -resolution xray and transmission electron microscopic analysis of a GaInAsSb/AlGaAsSb multiple quantum well laser structure[J].Journal of Applied Physics,1999,85(11):7664-7670. |
| [18] | Ali TEKE .Structural Analysis of a GaAs/AlxGal -x As Hot Electron Light Emitter Using Double Axis X-Ray Diffraction[J].Turkish Journal of Physics,2002,26:199-207. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%