用溶胶一凝胶方法在LaNiO3底电极上制备了500℃退火的BiFeO3薄膜.研究了室温下薄膜的结构,介电与铁电性质和漏电流性质.XRD研究表明薄膜呈R3m结构,没有观察到不纯相.铁电性研究表明,薄膜具有大的剩余极化强度,在600 kV/cm的测试电场下,薄膜的剩余极化强度为20uC/cm2,矫顽场为440 kV/cm.介电性质研究表明,在整个测试频率范围内,薄膜具有小的介电损耗.而漏电流特性测试表明,通过工艺的改进,有效的限制了BiFeO3薄膜的漏电流.
参考文献
[1] | E. Rokuta;Y. Hotta;H. Tabata .Low leakage current characteristics of YMnO_(3) on Si(111) using an ultrathin buffer layer of silicon oxynitride[J].Journal of Applied Physics,2000(11):6598-6604. |
[2] | Antonio F. Moreira dos Santos;Anthony K. Cheetham;Wei Tian;Xiaoqing Pan;Yunfa Jia;Nathan J. Murphy;James Lettieri;Darrell G. Schlom .Epitaxial growth and properties of metastable BiMnO_(3) thin films[J].Applied physics letters,2004(1):91-93. |
[3] | Kim D H;Lee H N;Varela M .Antiferroelectricity in multiferroic BiCrO3 epitaxial films[J].Applied Physics Letters,2006,89:162904-162906. |
[4] | Kumar MM.;Srinivas K.;Suryanarayana SV.;Palkar VR. .Ferroelectricity in a pure BiFeO3 ceramic[J].Applied physics letters,2000(19):2764-2766. |
[5] | Iakovlev S;Solterbeck CH;Kuhnke M;Es-Souni M .Multiferroic BiFeO3 thin films processed via chemical solution deposition: Structural and electrical characterization[J].Journal of Applied Physics,2005(9):4901-1-4901-6-0. |
[6] | Wang D H;Goh W C;Ning M et al.Effect of Ba doping on magnetic,ferroelectric,and magnetoelectric properties in mutiferroic BiFeO3 at room temperature[J].Applied Physics Letters,2006,88:212907-212909. |
[7] | Lee Y H;Wu J M;Lai C H .Influence of La doping in multiferroic properties of BiFeO3 thin films[J].Applied Physics Letters,2006,88:042903-042905. |
[8] | Kim J K;Kim S S;Kim W J .Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition[J].Applied Physics Letters,2006,88:132901-132903. |
[9] | Wang Y;Nan C W .Enhanced ferroelectricity in Ti-doped multiferroic BiFeO3 thin films[J].Applied Physics Letters,2006,89:052903-052905. |
[10] | Singh S K;Ishiwara H;Maruyama K .Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition[J].Applied Physics Letters,2006,88:262908-262911. |
[11] | Wang J;Neaton J B;Zheng H .Epitaxial BiFeO3 multiferroic thin film heterostruetures[J].Science,2003,299:1719-1722. |
[12] | Das R R;Kim D M;Back S H et al.Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering[J].Applied Physics Letters,2006,88:242904-242906. |
[13] | Yang SY;Zavaliche F;Mohaddes-Ardabili L;Vaithyanathan V;Schlom DG;Lee YJ;Chu YH;Cruz MP;Zhan Q;Zhao T .Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO3 films for memory applications[J].Applied physics letters,2005(10):2903-1-2903-3-0. |
[14] | Meng XJ.;Sun JL.;Ye HJ.;Guo SL.;Chu JH.;Cheng JG. .Growth of (100)-oriented LaNiO3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films[J].Journal of Crystal Growth,2000(1/2):100-104. |
[15] | 刘红日,刘祖黎,姚凯伦.La对BiFeO3薄膜的替代效应[J].功能材料与器件学报,2007(03):253-258. |
[16] | 刘红日,刘堂昆,李景德.溶胶-凝胶方法制备BiFeO3薄膜及其铁电性质[J].功能材料与器件学报,2005(02):168-172. |
[17] | Neaton JB;Ederer C;Waghmare UV;Spaldin NA;Rabe KM .First-principles study of spontaneous polarization in multiferroic BiFeO3[J].Physical review, B. Condensed matter and materials physics,2005(1):4113-1-4113-8-0. |
[18] | Yun K Y;Rieinschi D;Kanashima T .Enhancement of electrical properties in polyerystalline BiFeO3 thin films[J].Applied Physics Letters,2006,89:192902-192904. |
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