采用直流磁控溅射方法在柔性Kapton基片上沉积了FeCoSiB薄膜,研究了偏置磁场、溅射气压以及测试频率对薄膜应力阻抗效应的影响规律.结果表明,本文中优化的溅射气压为1.5 Pa,强的偏置磁场可形成强的横向各向异性,从而显著提高材料的应力阻抗效应.随着测试频率从0.1MHz升高到30 MHz,薄膜的应力阻抗效应显著增强.
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