采用射频磁控溅射法在氧氩比为0.2的混合气氛中,分别在室温、100℃、200℃、250℃、300℃、350℃和400℃温度下,在P-Si(100)衬底上制备了HfO2薄膜,并用SEM、XRD和AFM研究了衬底温度与薄膜沉积速率对微结构的影响.结果表明:随着衬底温度的增加,薄膜沉积速率呈减小趋势.室温沉积的HfO2薄膜为非晶态,当衬底温度高于100℃,薄膜出现单斜晶相,随着衬底温度继续增加,(111)择优取向更加明显,晶粒尺寸增大,薄膜表面粗糙度减小.
参考文献
| [1] | M.-Y. Ho;H. Gong;G. D. Wilk;B. W. Busch;M. L. Green;P. M. Voyles;D. A. Muller;M. Bude;W. H. Lin;A. See;M. E. Loomans;S. K. Lahiri;Petri I. Raisanen .Morphology and crystallization kinetics in HfO_(2) thin films grown by atomic layer deposition[J].Journal of Applied Physics,2003(3):1477-1481. |
| [2] | 邢玉梅,陶凯,俞跃辉,郑志宏,杨文伟,宋朝瑞,沈达身.在SOI材料上制备高质量的氧化铪薄膜[J].功能材料,2004(06):736-738. |
| [3] | Q. Fang;I. Liaw;M. Modreanu;P.K. Hurley;I.W. Boyd .Post deposition UV-induced O_2 annealing of HfO_2 thin films[J].Microelectronics and reliability,2005(5/6):957-960. |
| [4] | 高卫东,张伟丽,范树海,张大伟,邵建达,范正修.HfO2薄膜的结构对抗激光损伤阈值的影响[J].光子学报,2005(02):176-179. |
| [5] | Pereira L;Barquinha P;Fortunato E;Martins R .Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2005(1/3):210-213. |
| [6] | L. Pereira;A. Marques;H. Aguas .Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2004(1/3):89-93. |
| [7] | 郑伟涛.薄膜材料与薄膜技术[M].北京:化学工业出版社,2004 |
| [8] | 田光磊,申雁鸣,沈健,邵建达,范正修.制备工艺条件对薄膜微结构的影响[J].中国激光,2006(05):673-678. |
| [9] | Muller D;Sorsch T et al.The electronic structure at the atomic scale of ultra thin gate oxides[J].Nature,1999,299:758. |
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