采用SiO为起始原料、Ar为载气,蒸发温度1300℃、压力1～2×104Pa的生长条件下,成功地合成了超长的单晶硅纳米线;以SiO和P2O5混合粉末为起始原料时在相同的生长条件下实现了对硅纳米线的掺杂;借助电感耦合等离子体质谱仪(ICPMS)分析了硅纳米线P掺杂效果;利用扫描电镜(SEM)、高分辨透射电镜(HRTEM)、X射线衍射仪(XDR)等检测手段对硅纳米线进行了形貌和结构的表征,测试结果表明在不同的沉积区域硅纳米线具有大致相同的直径,但其长度随着温度的升高而变长,在1180℃的生长区域,硅纳米线的长度达到了150ìm;硅纳米线表面氧化层经HF和NH4F混合溶液处理后被完全剔除.
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