相变存储器(PCM)因依靠电阻率的变化来存储的模式,成为65nm以下非易失存储器应用的研究热点.然而,相变存储器的擦写功耗、复位电压、热稳定性和擦写寿命一直是相变存储器发展的几个瓶颈.对此,设计了一种基于相变合金Ga3Sb8Te1的新型嵌入式相变存储器,并建立有限元(FEA)热学,结晶动力学和SPICE宏模型.通过瞬态热学和结晶动力学仿真表明,基于Ga3sb8Te1的相变存储器具有更高的热稳定性和可循环擦写次数、更低的复位功耗,更快的置位频率,是一种较为理想的高性能相变存储器.
参考文献
| [1] | Ovshinsky S R .[J].Phys Renew Letter,1986,21(1968):1450. |
| [2] | Muller G;Nagel N;Pinnow C-U;et al.Rohr,T.Emerging non-volatile memory technoiogies[A].,2003:37-44. |
| [3] | Bez Robert .Non-volatile memory technologies:Emerging concepts and new materials[J].MatedalScience in Semiconductor Processing,2004,7:349-355. |
| [4] | Ottogalli F.Phase-change memory technology for embedded applications[A].:293-296. |
| [5] | 邓志欣,甘学温.相变存储器简介与展望[J].中国集成电路,2005(04):48-51. |
| [6] | 刘波,宋志棠,封松林.相变型半导体存储器研究进展[J].物理,2005(04):279-286. |
| [7] | Stefan Lai;Tyler Lowrey.OUM-A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications[J].IEDM,2001:803-807. |
| [8] | Maimon J;Spall E;Quinn R.Chalcogenide-Based Non-Volatile Memory Technology[J].IEEE Aerospace,2001:85. |
| [9] | Huai-Yu Cheng;Kin-Fu Kao;Chain-Ming Lee;Tsung-Shune Chin .Characteristics of Ga-Sb-Te Films for Phase-Change Memory[J].IEEE Transactions on Magnetics,2007(2 Pt.2):927-929. |
| [10] | Performances of phase-change recording disks based on GaSbTe media[J].IEEE Transactions on Magnetics,2005,41:1022-1025. |
| [11] | Lee C M;Lin Y I;Chin T S .Crystallization kinetics of amorphous Ga-Sb-Te chalcogenide films[J].Journal of Materials Research,2004,19:2929. |
| [12] | Ho-Ki Lyeo;David G. Cahill;Bong-Sub Lee;John R. Abelson;Min-Ho Kwon;Ki-Bum Kim;Stephen G. Bishop;Byung-ki Cheong .Thermal conductivity of phase-change material Ge_(2)Sb_(2)Te_(5)[J].Applied physics letters,2006(15):151904-1-151904-3-0. |
| [13] | Gongming Wei;Bas Feddes .Calibration of the Thermal Conductivity of Thin Films in Phase-Change Optical-Recording Stacks[J].Japanese journal of applied physics,2007(1):211-216. |
| [14] | Yinnon H;Uhlmann D R.J A kinetic treatment of glass formation[J].Journal of Non-Crystalline Solids,1983:254-275. |
| [15] | Wamwangi D.;Njoroge WK.;Wuttig M. .Crystallization kinetics of Ge4Sb1Te5 films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(1/2):310-315. |
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