基于MEMS技术在P型<100>晶向双面抛光单晶硅片上制作c型硅杯,在C型硅杯上表面扩散P+,采用磁控溅射法在扩散区上制备择优取向为<0002>晶向的n-ZnO薄膜,形成n-ZnO/P-Si异质结.采用HP4280A型C-V特性测试仪分析n-ZnO/p-Si异质结的C-V特性,该异质结为突变结.采用HP4145B型半导体参数测试仪分析n-ZnO/p-si异质结,I-V特性,结果给出,n-ZnO/p-Si异质结在正向偏压下,电流随外加偏压按指数函数增加,反向电流不饱和,采用突变异质结的正反向势垒能带结构对其,I-V特性进行分析.
参考文献
| [1] | Lee JY.;Choi YS.;Choi WH.;Yeom HW.;Yoon YK.;Kim JH.;Im S. .Characterization of films and interfaces in n-ZnO/p-Si photodiodes[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):112-116. |
| [2] | C.H. Park;J.Y. Lee;S. Im;T.G. Kim .n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2003(0):432-435. |
| [3] | Park CH;Jeong IS;Bae HS.n-ZnO/p-Si photediodes Mly isolated by B+ion-implantation[J].Nuclear Instruments and Methods in Physics Research,2004(216):127-130. |
| [4] | Lee JY;Choi Y S;Kim JH.Optimizingn-ZnO/p-Si heterojunetious for photediode applications[J].Thin Solid FiIms,2002(403-404):553-557. |
| [5] | D. G. Baik;S. M. Cho .Application of sol-gel derived films for ZnO/n-Si junction solar cells[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1999(1/2):227-231. |
| [6] | 段理,林碧霞,傅竹西,蔡俊江,张子俞.ZnO/p-Si异质结的光电转换特性[J].半导体学报,2005(10):1963-1967. |
| [7] | R. Romero;M.C. Lopez;D. Leinen;F. Martin;J.R. Ramos-Barrado .Electrical properties of the n-ZnO/c-Si heterojunction prepared by chemical spray pyrolysis[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2004(1):87-93. |
| [8] | 孙腾达,谢家纯,粱锦,黄莉敏,林碧霞,傅竹西.ZnO欧姆电极制备与n-ZnO/p-Si异质结紫外光电特性[J].中国科学技术大学学报,2006(03):328-332. |
| [9] | Yang Zhang;Jin xu;Bixia Lin.Fabrication and electrical charactefizafion of nanocrystalline ZnO/Si heterojunctions[J].Applied Surface Science,2006(252):3449-3453. |
| [10] | Liu Enke;Zhu Bingsheng;Luo Jiusheng.Semiconductor Physics[M].北京:电子工业出版社,1994:234-245. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%