主要研究了A1N钝化介质层对AlGaN/GaN异质结势垒层应力的修改以及应力的变化对二维电子气高温输运性质的影响.研究结果表明:AlN介质层会对AlGaN势垒层产生附加的平面压应变;AlN和传统的si3N4钝化介质都能减轻AlGaN势垒层在高温下的应变弛豫,但AlN介质层效果更明显.和传统的Si,N4钝化介质相比较,AlN钝化层不仅会显著增加AlGaN/GaN异质结二维电子气密度度,还会明显提高二维电子气迁移率,同时,AlN钝化后二维电子气密度的温度稳定性也更好.因此,对AlGaN/GaN异质结器件来说,AIN是一种有潜力的钝化介质.
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