制备温度对多孔硅光学特性的影响

功能材料与器件学报 , 2009, 15(2): 165-168. doi: 10.3969/j.issn.1007-4252.2009.02.011

制备温度对多孔硅光学特性的影响

1.华东师范大学物理系纳光电集成与先进装备教育部工程研究中心,上海,200062

2.华东师范大学物理系纳光电集成与先进装备教育部工程研究中心,上海,200062

3.华东师范大学物理系纳光电集成与先进装备教育部工程研究中心,上海,200062

4.新加坡南洋理工大学电子与电气工程学院,新加坡,639798

基金项目: 上海市自然科学基金(07ZR14033) Special Projeet for Nanotechology of shanghai(0752nm011) Applied Materials Shanghai Research & Development Fund(07SA12) Shanghai Pujiang Program(08PJ14043)

关键词：多孔硅 , 制备温度 , 光特性

Critical anodization temperature for optical transition of porous silicon

PAN Li-kun ^1, , LI Hai-bo ^2, , SUN Zhuo ^3, , SUN Chang-qing ^4,

1.华东师范大学物理系纳光电集成与先进装备教育部工程研究中心,上海,200062

2.华东师范大学物理系纳光电集成与先进装备教育部工程研究中心,上海,200062

3.华东师范大学物理系纳光电集成与先进装备教育部工程研究中心,上海,200062

4.新加坡南洋理工大学电子与电气工程学院,新加坡,639798

Keywords： Porous silicon , Anodization , Optical behavior

本文不同的温度下制备多孔硅.通过荧光光谱、光吸收谱、X射线光电子谱研究了多孔硅的光和结构特性.研究结果表明存在着一个制备临界温度343 K,当制备温度从临界温度之下提高到临界温度之上时,多孔硅的荧光和光吸收从红移转向蓝移,同时硅2p电子结合能也从减小转向增大.

The porous silicon (PS) samples were prepared at different anodization temperature. Photolu-minescence, photo- absorbance, and X- ray photoelectron spectroscopies were used to study the struc-tural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si -2p binding energy transition from low to high at a critical anodization tem-perature, 343 K.

参考文献

[1]	Gaburro Z.;Babic D.;You HD. .Effect of resistivity and current density on photoluminescence in porous silicon produced at low HF concentration[J].Journal of Applied Physics,1998(11):6345-6350.
[2]	Kordas K.;Beke S.;Hu T.;Leppavuori S.;Remes J. .Manufacturing of porous silicon; porosity and thickness dependence on electrolyte composition[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(1/4):190-193.
[3]	Koshida N;Koyama H .Photoluminescent and eleetroluminescent properties of porous silicon[J].Nanotechnology,1992,3:192-195.
[4]	Ono H;Gomyou H;Morisaki H et al.Effects of Anodization Temperature on Photoluminescence from Porous Silicon[J].Journal of the Electrochemical Society,1993,140(12):L 180-LL182.
[5]	Setzu S.;Romestain R.;Lerondel G. .Temperature effect on the roughness of the formation interface of p-type porous silicon[J].Journal of Applied Physics,1998(6):3129-3133.
[6]	D. J. Blackwood;Y. Zhang .The effect of etching temperature on the photoluminescence emitted from, and the morphology of, p-type porous silicon[J].Electrochimica Acta,2003(6):623-630.
[7]	The etching solution will evaporate and PS can't be fabricated at anodization temperature higher than 363 K[Q].
[8]	Andersen OK.;Veje E. .EXPERIMENTAL STUDY OF THE ENERGY-BAND STRUCTURE OF POROUS SILICON[J].Physical Review.B.Condensed Matter,1996(23):15643-15652.
[9]	Theiss W.Scout Thin Film Analysis Software Handbook[M].Aachen,Germany:M.Theiss-Hard-and Software for optical spectroscopy,2001
[10]	Theiβ W .Optical properties of porous silicon[J].Surface Science Reports,1997,29(3 -4):91-192.
[11]	Furukawa S;Miyasato T .Quantum size effects on the optical band gap of mieroerystalline Si:H[J].Physical Review B,1988,38(08):5726-5729.
[12]	Guha S.;Lang W.;Steiner P. .RESONANT RAMAN SCATTERING AND PHOTOLUMINESCENCE STUDIES OF POROUS SILICON MEMBRANES[J].Journal of Applied Physics,1996(11):8664-8668.
[13]	L. K. Pan;Chang Q. Sun .Coordination imperfection enhanced electron-phonon interaction[J].Journal of Applied Physics,2004(7):3819-3821.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网