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在多量子阱红外探测器外延材料制备中,由于器件响应波长对量子阱的阱宽和垒高变化敏感,因此对外延材料的制备有很高的要求.本文中我们利用光致荧光谱(PL)对GaAs/AIGaAs多量子阱红外探测器材料进行了测量和计算,从而在器件工艺前,快速确定器件的探测波长.以光致荧光光谱对GaAs/AIGaAs多量子阱红外探测器材料进行测试,通过理论计算,得到多量子阱红外探测器探测波长.计算得到的理论响应波长与实际器件的响应波长有良好的一致性,证明用光荧光谱对外延材料进行测量并计算,能够更加有效地开展器件研究工作.同时,我们在低温下测量了外加偏压下器件暗电流情况,以及液氮温度下,500K黑体辐射情况时,信号噪声比达到235.3.

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