采用射频磁控反应溅射技术制备不同Si层厚度的a-Si/a-SiNx超晶格材料.利用红外光谱(IR)、能谱(EDS)、X射线衍射谱(XRD)、吸收谱和光致发光(PL)谱对超晶格材料的成分、结构和发光特性进行研究.结果表明,样品的光学吸收边和PL峰随着Si层的厚度的变化而发生明显偏移,观察到了明显的量子限制效应.在氮气保护下以1000℃对样品进行热退火处理,发现Si层厚的样品退火后发光峰相对于退火前发生了蓝移,这归因于样品中nc-Si颗粒的形成.
参考文献
| [1] | Abeles B;Tiedje T .Amorphous Semiconductor Superlattices[J].Physical Review Letters,1983,51:2003-2006. |
| [2] | Lockwood D J;Lu Z H;Baribeau J M .Quantum Confined Luminescence in Si/SiO2 Superlattices[J].Physical Review Letters,1996,76:539-541. |
| [3] | Brian T Sullivan;David J Lockwood;Henri J;Labbe et al.Photoluminescence in amorphous Si/SiO2 superlattices fabricated by magnetron sputtering[J].Applied Physics Letters,1996,69(21):3149-3151. |
| [4] | Zhou Yingwu;Guo Hengqun .Photolumincscence Characteristic of a-Si/SiO2 Multiple Quantum Well Material[J].Journal of Huaqiao University,1999,20(03):237-239. |
| [5] | Monroy BM;Santana G;Aguilar-Hernandez J;Benami A;Fandino J;Ponce A;Contreras-Puente G;Ortiz A;Alonso JC .Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2006(2):349-352. |
| [6] | Wang L.;Huang XF.;Li ZF.;Li J.;Bao Y.;Xu J.;Li W.;Chen KJ.;Ma ZY. .The room-temperature visible photoluminescence from nanocrystalline Si in Si/SiNx superlattices[J].Solid State Communications,2001(4):239-244. |
| [7] | Kunji Chen;Xinfan Huang;Jun Xu et al.Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures[J].Applied Physics Letters,1992,61(17):2069-2071. |
| [8] | L. Zhang;K. Chen;X. Huang;L. Wang;J. Xu;W. Li .Control of size and shape of nc-Si in a-SiN_x/a-Si:H multilayers by laser induced constrained crystallization[J].Applied physics, A. Materials science & processing,2003(3/4):485-489. |
| [9] | Fejfar A;Zemek J;Trchová M .Hydrogen and nitrogen bonding in silicon nitride layers deposited by layer reactive ablation:Infrared and X-ray photoelectron study[J].Applied Physics Letters,1995,67:3269-3271. |
| [10] | 王颖,申德振,张吉英,刘益春,张振中,吕有明,范希武.富硅量不同的富硅氮化硅薄膜的光致发光研究[J].液晶与显示,2005(02):103-106. |
| [11] | Zhixun Ma;Xianbo Liao;Gonglin Kong .Absorption spectra of nanocrystalline silicon embedded in SiO_(2) matrix[J].Applied physics letters,1999(13):1857-1859. |
| [12] | Wang L.;Wang XW.;Huang XF.;Ma ZY.;Bao Y.;Shi JJ.;Li W.;Xu J.;Chen KJ. .The effect of post-treatments on crystallization in a-Si : H/a-SiNx : H multilayers[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2002(Pt.2):751-755. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%