制备了SnO2棒状和球状晶粒粉体的气敏元件并进行稳定性测试,初步分析了元件的老化过程和机制.棒状和球状晶粒粉体以等重量比混合的气敏材料在850℃下高温烧结能提高气敏元件的长期稳定性.采用对材料微结构敏感的复阻抗谱方法测量了试样电性能的变化,通过吸收电流曲线分析了试样的与荷电状态有关的离子电导成分.结果表明,试样在通电老化之初电阻电容值有较大波动,通电数天后趋于稳定,老化表现为晶界电阻和晶界电容的变化,说明老化过程伴随着气敏材料的晶界势垒高度和晶界耗尽层宽度的改变,其原因可能是直流偏压作用下晶界层中的离子迁移.
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