优化了金属纳米晶的制备工艺参数,得到了分布均匀,形状为球形,平均尺寸8nm,密度2.5×1011/cm2的Ag纳米晶.在此基础上,制备了包含Ag纳米晶的MOS电容结构.利用高频电容-电压(C-V)和电导-电压(G-V)测试研究了其电学性能,证明该MOS电容结构的存储效应主要源于金属纳米晶的限制态.电容-时间(C-t)测试曲线呈指数衰减趋势,保留时间290s,具有较好的保留性能.
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