在室温下使用过滤阴极真空电弧系统在多孔硅表面沉积大约10纳米左右厚度的铜、铝和钛薄膜,并且在真空下800度退火10分钟.多孔硅层是通过电化学腐蚀硅制得.X射线光电子谱、荧光谱,光吸收谱和X射线衍射谱的研究表明退火后,沉积铜和钛的样品出现明显的光吸收红移和硅2p电子能级移动.这是由于在多孔硅表面形成铜和钛的硅化物而引起的晶体场和电子传输变化所造成的.
Cu,Al and Ti films of ～ 10 nm thickness were deposited on porous silicon (PS) at room tem-perature using Filtered Cathodic Vacuum Arc system and annealed at 800℃ for 10 min in vacuum. The PS layers were obtained by anodization of Si wafer. X -ray photoelectron spectroscopy,photolumines-cence (PL),photo -absorption (PA),and X -ray diffraction studies revealed that after annealing,Cu - and Ti -deposited samples exhibited obvious PA red -shift and Si -2p level shift,which arise from the crystal field variation due to the formation of Cu/Ti silicides at the surface as well as the conduction e-lectronic transportation.
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