本文在实验上观察到GaAs/A1As/InGaAs应变共振隧穿二极管(RTD)在电流负阻区出现一段"平台"现象,该现象来源于发射极子能级和量子阱子能级之间的相互耦合.在外加磁场的作用下,它们之间的耦合得到抑制,在一定的磁场下,负阻"平台"现象消失.此外,峰值电流随磁场增加而减小,导致峰谷电流比下降,同时峰值电压也发生相应的变化.
参考文献
[1] | Chang L L;Esaki L;Tsu R .Resonant tunneling in semiconductor double barriers[J].Applied Physics Letters,1974,24(12):593-595. |
[2] | Peiji Zhao;Hong Liang Cui;Dwight L. Woolard;Kevin L. Jensen;F. A. Buot .Equivalent circuit parameters of resonant tunneling diodes extracted from self-consistent wigner-poisson simulation[J].IEEE Transactions on Electron Devices,2001(4):614-627. |
[3] | Talyanskii V I;Hutchinson A B;Batov I E et al.Interaction between surface acoustic waves and resonant tunneling structures in GaAs[J].Journal of Applied Physics,1999,86(05):2917 -2919. |
[4] | Moise T S;Kao Y C;Garrett L D et al.Optically switch resonant tunneling diodes[J].Applied Physics Letters,1995,66(09):1104-1106. |
[5] | Mirabedini AR;Mawst LJ;Botez D;Marsland RA .High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition[J].Applied physics letters,1997(21):2867-2869. |
[6] | Matsuzaki H;Osaka J;Sugiyama H et al.High peak current density and low peak voltage strained In0.9-0.8Ga0.1-0.2 As/AlAs RTD grown by metal organic chemical vapor deposition[J].Compound Semiconductor,2002,170:6367. |
[7] | Canali L;Lazzarino M;Sorba L et al.Stark-Cyclotron Resonance in a Semiconductor Superlattice[J].Physical Review Letters,1996,76(19):3618-3621. |
[8] | Chan KS.;Toombs GA.;Eaves L.;Sheard FW. .MAGNETOQUANTUM EFFECTS IN III-V TUNNELING HETEROSTRUCTURES[J].Physical Review.B.Condensed Matter,1997(3):1447-1455. |
[9] | Kim D K;Roblin P;Seh K S et al.Impact of optical phonon scattering on magnetotranspert in double-barrier hetero-structures[J].Physical Review B:Condensed Matter,2002,65(11):115328 -1-7. |
[10] | Tsui D C .Observation of Surface Bound State and TwoDimensional Energy Band by Electron Tunneling[J].Physical Review Letters,1970,24(07):303-306. |
[11] | Wang J;Beton P H;Moil N et al.Resonant Magnetotunneling via One-Dimensional Quantum Confined States[J].Physical Review Letters,1994,73(08):1146-1149. |
[12] | Zhang C;Lerch M L F;Martin A D et al.Plasmon assisted resonant tunneling in a double barrier heterostructure[J].Physical Review Letters,1994,72(21):3397-3400. |
[13] | Geim A K;Foster T J;Nogaret A et al.Resonant tunneling through donor molecules[J].Physical Review B:Condensed Matter,1994,50(11):8074-8077. |
[14] | Leadbeater M L;Alves E S;Eaves L et al.Magnetic field studies of elastic scattering and optic-phonon emission in resonant-tunneling devices[J].Physical Review B:Condensed Matter,1989,39(05):3438-3441. |
[15] | Abouelnour A;Schuenemann K .A comparison between different numerical methods used to solve Poisson's and Schroedinger's equations in semiconductor heterostructures[J].Journal of Applied Physics,1993,74(05):3273-3276. |
[16] | Zhu B;Huang K .Self-consistent treatment of three-dimensional-two-dimensional and two-dimensionaltwo-dimensional resonant tunneling in double-barrier structures[J].Physical Review B:Condensed Matter,1993,48(07):4575-4585. |
[17] | Tsu R;Esaki L .Tunneling in a finite superlattice[J].Applied Physics Letters,1973,22(11):562-564. |
[18] | Young J F;Wood B M;Liu H C et al.Effect of circuit oscillations on the dc current-voltage characteristics of double barrier resonant tunneling structures[J].Applied Physics Letters,1988,52(17):1398-1400. |
[19] | Peiji Zhao;H. L. Cui;D. Woolard .Simulation of resonant tunneling structures: Origin of the I-V hysteresis and plateau-like structure[J].Journal of Applied Physics,2000(3):1337-1349. |
[20] | Tsuchiya M;Sakaki H .Tunneling spectroscopy of resonant transmission coefficient in double barrier structure[J].Japanese Journal of Applied Physics,1991,30(06):1164-1168. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%