本文建立了相变存储器存储单元的有限元分析模型,对相变材料以及加热电极热电参数对加热效率、功耗的影响进行了研究.模拟研究表明:引入了随温度变化的相变层热导率,能更精确地模拟器件温度场;加热电极电阻率与相变层电阻率越大,加热效率越高,功耗越低;但为了使加热效率更集中在相变材料层中,加热电极电阻率不能大于相变层电阻率.其中,在相变材料设计选择方面,具有较高电阻率的Si_2Sb_2Te_5较传统的Ge_2Sb_2Te_5更适合应用于低功耗相变存储器的应用;而在底部加热电极的选择上,具有较高电阻率和低热导率的TiN较TiW、W或Ti等电极相比,在低功耗方面更具优势.
In order to study the influence of thermal and electrical properties of phase change material and heater on heating efficiency and power consumption,a finite element analytical model was established.It is demonstrated by the simulation that a more accurate simulation can be done if introducing the temperature dependent thermal conductivity of phase change layer,and that heating efficiency is improved when increasing the resistivity of heater and phase change layer,and that the resistivity of heater should be lower than the resistivity of PCL in order to concentrate the heating efficiency in the phase change layer.In respect to the application of phase change memory with lower power consumption,those phase change materials that with relatively higher resistivity such as Si_2Sb_2Te_5 are more competent than the traditional Ge_2Sb_2Te_5,and for the heater material that can reduce power consumption,TiN is better than TiW,W and Ti.
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