Ni/Au、Pd/Au与p-AlGaN材料的接触特性

功能材料与器件学报 , 2010, 16(1): 77-80. doi: 10.3969/j.issn.1007-4252.2010.01.015

Ni/Au、Pd/Au与p-AlGaN材料的接触特性

白云 ^1, , 麻芃 ^2, , 朱杰 ^3, , 刘键 ^4, , 刘新宇 ^5,

1.中国科学院微电子研究所,北京,100029

2.中国科学院微电子研究所,北京,100029

3.中国科学院微电子研究所,北京,100029

4.中国科学院微电子研究所,北京,100029

5.中国科学院微电子研究所,北京,100029

关键词： p-AlGaN , 高Al组分 , 欧姆接触

Ni/Au and Pd/Au contacts to p-AIGaN

BAI Yun ^1, , MA Peng ^2, , ZHU Jie ^3, , LIU Jian ^4, , LIU Xin-Yu ^5,

1.中国科学院微电子研究所,北京,100029

2.中国科学院微电子研究所,北京,100029

3.中国科学院微电子研究所,北京,100029

4.中国科学院微电子研究所,北京,100029

5.中国科学院微电子研究所,北京,100029

Keywords： p-AIGaN , high Al contents , ohmic contacts

在AlGaN pin型日盲紫外探测器结构中的p-AIGaN层上生长了Ni/Au和Pd/Au,并在600-850℃温度下进行快速热退火,测量其退火前后传输线模型中各金属接触间的电学性质.实验发现,Ni/Au与Pd/Au在p-AlGaN上表现出了不同的接触性能.为了更好的说明金属与p-AlGaN材料接触之间在退火后电流的变化,还测量了p-AlGaN材料裸片两点之间I-V曲线在退火前后的变化.实验表明,比起Ni/Au来,Pd/Au在p-AlGaN材料上制备欧姆接触具有一定的优势,并在文中进行了分析.

Contacts to p-AIGaN layer using Ni/Au and Pd/Au are reported. The metals Ni/Au and Pd/Au deposited on p – AlGaN layer (x =0.46) were annealed from 600～850℃. The dependence of the contacts properties on annealing temperature in N_2 is examined via TLM measurements. Experiments show some different contacts properties between Ni/Au and Pd/Au on p-AlGaN. The I-V properties of bare p-AlGaN are measured to better analyze the change in I-V curves of Ni/Au and Pd/Au contacts. The results show the effectiveness of Pd/Au than Ni/Au to make the ohmic contacts to p-AlGaN.

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