采用射频磁控溅射方法在不同形貌的Mo电极上制备了(002)择优取向的AIN薄膜.采用XRD、FESEM表征了Mo电极及AIN薄膜的结构、表面形貌及择优取向.结果表明,Mo电极的形貌影响AIN薄膜的择优取向生长,在较高溅射气压下沉积的Mo电极晶粒细小、分布均匀,有助于AIN薄膜(002)择优取向生长.
Mo electrode and(002)-oriented AIN films were deposited by reactive magnetron sputtering under various sputtering pressures.The films were characterized by X-ray diffraction(XRD),atomic force microscopy(AFM)and field-emission scanning electron microscopy(FESEM).It was found that the orientation of AIN films was influenced by the morphologies of Mo electrodes.The AIN films deposited on Mo electrode performs as fine grains exhibits highly(002)orientation.
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