用低压金属有机物化学汽相沉积法(MOCVD)在Si(100)无偏角和Si(100)4°偏角衬底上外延生长GaAs层.异质外延采用两步生长法,并分别优化了两种衬底上的非晶低温缓冲层的生长条件.用X射线双晶衍射(XRD)和透射电子显微镜(TEM)对两种衬底上的GaAs外延层进行了结构表征,其中Si(100)4°偏角衬底上1.8μm厚GaAs的(004)面XRD衍射半高全宽338 arcsec,同比在无偏角衬底上的半高全宽为494arcsec,TEM图片显示4°偏角衬底上外延层中的位错密度大大降低.
GaAs epilayers were grown on exactly (100) -oriented Si and 4° misoriented (100) Si substrates by low - pressure metalorganic chemical vapor deposition ( LP - MOCVD ). Two - step method was used to the heteroepitaxial growth and the initial amorphous GaAs buffer layers were optimized, respectively. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed to characterize the quality of GaAs epilayers. The full width at half maximum (FWHM) value of XRD (400) ω scan is 340arcsec for 1. 8μm GaAs epilayer on 4° misoriented (100) Si, compared to 494arcsec for 1.8μm GaAs epilayers on exactly (100) -oriented Si. The images of TEM shows the dramatical reduction of dislocations in GaAs epilayers on 4°misofiented (100) Si substrates.
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