本文在采用键合工艺制备以硅为衬底的氮化镓发光二极管的工艺过程中分别尝试采用金-金,金-硅,铝-铝,铝-硅键合对.研究发现金-金键合对得到了100%的键合面积.键合工艺结束后,采用KrF激光分离氮化镓发光二极管的器件层和原蓝宝石衬底.通过超声波造影仪(SAM)和扫描电子显微镜(SEM)研究了金属键合工艺过程中相应的键合机制.
Metallic bonding including Au - Au,Au - Si, AI-AI and AI - Si bonding were attempted,and the Au - Au diffusion bonding with the best interface quality and nearly 100% bonded area was used to fabricate the vertical InGaN -GaN light-emitting diodes (LEDs) on 50 -mm Si substrate. After the wafer bonding, a KrF excimer laser was used to separate the GaN layer from the grown sapphire substrate. The underlying mechanisms in above metallic bonding pairs were investigated by scanning acoustic micrographs (SAM) and scanning electron microscope (SEM).
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